Ling Lin,
Honglong Xing
*,
Ruiwen Shu,
Lei Wang,
Xiaoli Ji,
Dexin Tan and
Ying Gan
School of Chemical Engineering, Anhui University of Science and Technology, Huainan 232001, China. E-mail: austxhl@163.com; Tel: +86-554-6668497
First published on 27th October 2015
In this work, Ni-doped SnO2@MWCNTs composites were synthesized by a facile one-step hydrothermal method. The morphology and structure of the as-prepared composites were characterized by XRD, SEM, TEM, XPS, FT-IR and Raman. It was found that the SnO2 nanoparticles were successfully anchored on the MWCNTs with a diameter of 3–5 nm and Ni2+ was successfully doped into the SnO2@MWCNTs. Moreover, the effect of the doped Ni molar percentage on the electromagnetic parameters and microwave absorbing properties of the Ni-doped SnO2@MWCNTs composites was studied in the 2–18 GHz frequency range. The results showed that the composites with 28.2% doped Ni content exhibited the best microwave absorbing properties. The maximum RL reached −39.2 dB at 8.2 GHz with a thickness of 2.5 mm, and the bandwidth of RL lower than −10 dB was 3.6 GHz (from 12.6 to 16.2 GHz) with a thickness of 1.5 mm. The excellent microwave absorbing properties could be attributed to the good impedance match, Debye relaxation, interfacial polarization and high conductivity of the MWCNTs component. It was believed that the Ni-doped SnO2@MWCNTs composites could be used as a new type of microwave absorbing materials against electromagnetic pollution.
In order to meet the requirements of new type microwave absorption materials, such as thin thickness, light weight, wide absorption frequency band and strong absorption, it is necessary to decorate or fill in/on MWCNTs to improve microwave attenuation capacity.3,7–11 For example, Lu et al. reported that MWCNTs decorated with ZnO nanocrystals had highly efficient microwave absorption properties at elevated temperature.3 Wang et al. fabricated MWCNT/CdS nanocomposites via a one-step chemical co-precipitation approach and found that the composites exhibited excellent microwave absorbing properties, i.e. the maximum reflection loss (RL) reached −45 dB with a thickness of 1.5 mm and the absorption bandwidth of RL lower than −15 dB was 2.4 GHz.11 Tin oxide (SnO2) is one of the most important n-type semiconductor materials with a wide band gap of 3.6 eV at room temperature.12 It has many unique properties such as high optical transparency, electrical conductivity and chemical sensitivity, which made it become an attractive material for application in dye-sensitized solar cells,13 field effect transistors,14 catalysis15,16 and gas-sensing.17,18 In recent years, SnO2 has attracted significant attention due to its remarkable microwave absorption properties.19–21 As is well known, the microwave absorption performance can be determined by the complex permeability/permittivity and EM impedance matching. For the MWCNTs/semiconductor nanocomposites, the lack of permeability lead to the poor EM impedance matching, indicating that the desired EM absorption performance can not be reached in the present system.
Magnetic metal doping is an effective way to solve this problem. Compared with Fe and Co, Ni possesses the higher relative permeability and good anti-oxidation performance, leading to that Ni have better magnetic loss and be widely used as the microwave absorbers. Nickel has been extensively used in the field of microwave absorption, owing to its easy preparation and low cost.22,23 However, Ni would induce an eddy current by microwave in the GHz range because of its high electrical conductivity. To alleviate this problem, an effective way is to prepare complex structures of Ni or synthesize Ni-based composites, such as Ni@Al2O3, Ni@TiO2 core–shell particles, Ni–ZnO and so on, which have been synthesized and their EM performances have been investigated in detail.12,22,23
Based on our other work (submitted to other Journal), we synthesized magnetic metal (Fe, Co, Ni) doped ZnO/Al composites, and discussed the microwave absorption of the composites. The results showed that Ni ions doping ZnO/Al composites have the best microwave absorption.
In addition, due to the nearly equal ionic radii of Ni2+ ions (0.69 Å) and Sn4+ ions (0.71 Å),24 Ni ions can effectively substituted Sn ions. Therefore, the synthesis of Ni-doped SnO2/MWCNTs is imperative if it is to be used as the microwave absorber. However, to the best of our knowledge, there are no references on the microwave absorption properties of magnetic metal ion such as Ni-doped SnO2@MWCNTs composites has been reported so far.
In the present study, the Ni-doped SnO2@MWCNTs composites were prepared by a facile one-step hydrothermal method. The structure, morphology and interfacial interactions between Ni-doped SnO2 and MWCNTs were explored. Moreover, the effect of doped Ni molar percentage on the electromagnetic parameters and microwave absorbing properties of the Ni-doped SnO2@MWCNTs composites were investigated. The resulting composites is promising and lightweight for a practical use of electromagnetic wave absorption applications in the areas of stealth technology.
:
1.
Fig. 2(f) shows the EDS elemental composition of Ni-doped SnO2@MWCNTs composites. It is clearly shows that the peaks associated with C, Sn, Ni, O elements are present. The HRTEM image of Ni-doped SnO2@MWCNTs composites shown in Fig. 2(h) also reveals the crystalline structure of the composites, and the crystalline lattice spacing (0.35 nm) and (0.22 nm) can be assigned to the (110) plane and (220) plane of SnO2, respectively. Based on the TEM and HRTEM analysis, it can be seen that the structure of SnO2@MWCNTs was not changed, and Ni ions have successfully doped into SnO2@MWCNTs.
![]() | (1) |
To explore the effect of doped Ni content on the crystalline structure of Ni-doped SnO2@MWCNTs composites, the (101) and (211) characteristic diffraction peaks are monitored. From Fig. 3(b), it can be apparently seen that as the doped Ni molar percentage increases from 0 to 35.4%, the 2θ of (101) and (211) diffraction peaks shift right from 0.15° to 0.85° and from 0.55° to 1.86°, respectively. Besides, the plane of (101) intensity decreases and the plane of (200) enhances with the doping percentage increasing. However, there is no characteristic diffraction peaks of Ni species can be detected, which may be due to the high dispersion of the Ni nanoparticles with too small particle sizes to be identified by the conventional XRD method. When the Ni doping percentage more than 35.4%, the XRD results are showed in the ESI.† Additionally, the lattice constant a and c of Ni-doped SnO2@MWCNTs composites exhibit in Table 1. According to the lattice parameters of the composites, the lattice constant a and c are changing when Ni ions doping into SnO2@MWCNTs. Because the ion radius of Ni2+ (0.69 Å) is smaller than that of Sn4+ (0.71 Å), the decrease of lattice constant of SnO2@MWCNTs is caused by the substitution of Sn atoms of SnO2 lattice by Ni atoms. So the lattice constant of Ni-doped SnO2@MWCNTs with different Ni molar percentage are less than the SnO2@MWCNTs lattice constant values (a = b = 4.76930, c = 3.16126).26 Combined the results of EDS, XRD and HRTEM analysis, it can be deduced that the Ni2+ cation have systematically entered the crystal lattice of SnO2 without deteriorating the original crystal structure. Therefore, the Ni-doped SnO2@MWCNTs composites were successfully synthesized by a facile hydrothermal method.
| Samples | Lattice constant/(Å) | |
|---|---|---|
| a = b | c | |
| 0% Ni-doped SnO2@MWCNTs | 4.76930 | 3.16126 |
| 5.5% Ni-doped SnO2@MWCNTs | 4.73722 | 3.18232 |
| 10.7% Ni-doped SnO2@MWCNTs | 4.74240 | 3.18576 |
| 20.0% Ni-doped SnO2@MWCNTs | 4.72681 | 3.19510 |
| 28.2% Ni-doped SnO2@MWCNTs | 4.73879 | 3.18593 |
| 35.4% Ni-doped SnO2@MWCNTs | 4.73742 | 3.18841 |
In order to confirm the presence of the surface compositions and chemical state of MWCNTs, XPS was carried out to further confirmation. Fig. 3(c) shows the wide span spectra of SnO2@MWCNTs and Ni-doped SnO2@MWCNTs composites, which indicates that these two spectra are the same except the Ni peaks were arose in the latter one. In Fig. 3(d), the spectrum of C 1s shows four peaks at 284.6 eV, 285.6 eV, 286.7 eV and 288.9 eV, corresponding to C–C or C
C in the aromatic rings, C–O, C
O, and O–C
O groups of acid MWCNTs, respectively.27 The O 1 s peaks at 531.0 eV, 531.6 eV and 532.8 eV shown in Fig. 3(e), referring to C
O or O–Sn–O group, the absorbed oxygen within the crystalline and C–O in the MWCNTs.27,28 For the spectrum of Sn in Fig. 3(f), the peaks of Sn are loaded at 487.5 eV and 495.9 eV, which are assigned to Sn 3d5/2 and Sn 3d3/2. The energy gap of Sn 3d3/2 and Sn 3d5/2 is 8.4 eV, and this spin–orbit splitting is assigned to the lattice of Sn4+ ions in tin oxide.29,30 In terms of Ni element chemical state, Fig. 3(g) exhibit the spectrum of Ni in Ni-doped SnO2@MWCNTs composites. The peaks at 856.6 eV and 862.6 eV are assigned to Ni 2p3/2 and its satellite structure, while peaks at 874.3 eV and 880.5 eV are attributed to Ni 2p1/2 and its satellite structure. Herein, the energy difference between Ni 2p1/2 and Ni 2p3/2 is 17.7 eV, which is different from that of NiO (18.4 eV),31,32 suggesting that the Ni ions are present in SnO2@MWCNTs. Besides, among the broad peak at 862.6 eV, there are two low shoulder peaks at 861.4 eV and 864.2 eV, indicating Ni–O binding is present in Ni-doped SnO2@MWCNTs. The Ni–O binding is from the substitution of Ni ion to Sn4+. According to integral area and the atomic ratio of Ni to the whole composites (4.59%), the amount of Ni–O binding is estimated to be about 2%. Meanwhile, XPS also show the C, Sn, O elements in the SnO2@MWCNTs, while C, Sn, Ni, O elements in the Ni-doped SnO2@MWCNTs, which consistent with the EDS results. Considering these results above, indicates that the doping of Ni ions substituted Sn site of the lattice and Ni–O binding was exiting in the Ni-doped SnO2@MWCNTs.
O in the carboxylic acid moieties at 1744 cm−1. Other characteristic vibrations were the O–H deformation peak at 1640 cm−1, the C–O stretching peak at 1079 cm−1, and the C–H in-plane bending vibration peak at 1383 cm−1. The appearance of peaks at 2928 and 2860 cm−1 correspond to C–H asymmetric stretching of the –CH3 and –CH2 group. The SnO2@MWCNTs composites has similar FT-IR spectrum as MWCNTs. The characteristic band at 608 cm−1 is assigned to the stretching of O–Sn–O vibration, which indicates that the incorporation of SnO2 particles on the MWCNTs. Ni-doped SnO2@MWCNTs composites have similar FT-IR spectrum as SnO2@MWCNTs. However, the strength of absorbing peaks around 400–800 cm−1 in Ni-doped SnO2@MWCNTs significantly decreases due to the Ni2+ doping.
![]() | (2) |
![]() | (3) |
As illustrated in Fig. 6(a), for Ni-doped SnO2@MWCNTs composites with different doped Ni molar percentage, the values of real permittivity ε′ tend to decrease with the increase of frequency over the whole frequency range (2–18 GHz). The values of ε′ are in the range of 9.96 to 25.46 from 0% to 35.4% doped Ni molar percentage, respectively. Meanwhile, in Fig. 6(b), the imaginary permittivity ε′′ values of Ni-doped SnO2@MWCNTs composites is fluctuating in the range of 2–18 GHz, which first declines, and then increases with three peaks. The values of ε′′ are in the range of 4.29 to 15.67 from 0% to 35.4% doped Ni molar percentage, respectively. It is well known that high value of ε′ is harmful to the microwave absorption, which might lead to the impedance mismatch. The high values of ε′ of Ni-doped SnO2@MWCNTs might come from interfacial polarization, which may results from the SnO2 nanoparticles deposit on the surface of MWCNTs. Combined Fig. 6(a) with (b), it can be seen that the Ni-doped SnO2@MWCNTs composites with 10.7% doped Ni molar percentage, both the ε′ and ε′′ curves are much higher than any other composites, indicating the worst impedance matching characteristic.
Fig. 6(c) and (d) show the real permeability μ′ and imaginary permeability μ′′ curves of Ni-doped SnO2@MWCNTs composites with different doped Ni molar percentage, respectively. It is found that in Fig. 6(c), the values of μ′ are in the range of 0.92 to 1.39 from 0% to 35.4% doped Ni molar percentage, respectively, almost fluctuating around the constant 1 (μ′ ≈ 1). As shown in Fig. 6(d), the values of μ′′ are in the range of −0.44 to 0.23 from 0% to 35.4% doped Ni molar percentage, respectively, fluctuating around the constant 0 (μ′′ ≈ 0).
In general, magnetic loss mainly come from eddy current effects, natural resonance, and exchange resonance in the microwave frequency. The eddy current effects is related to the thickness (d) and the electrical conductivity (σ) of the material, which can be calculated by the equation:38,39
| μ′′ ≈ 2πμ0(μ′)2σd2f/3 | (4) |
To further demonstrate the microwave absorbing properties of Ni-doped SnO2@MWCNTs composites, the dielectric loss tangent (tan
δe = ε′′/ε′) and magnetic loss tangent (tan
δm = μ′′/μ′) are plotted against frequency, respectively. As illustrated in Fig. 6(f), the values of tan
δe for the Ni-doped SnO2@MWCNTs composites change from 0.34 to 0.93 from 0% to 35.4% doped Ni molar percentage, respectively. Meanwhile, when the doped Ni molar percentage is less than 10.7%, the values of tan
δe are higher than that of SnO2@MWCNTs. However, when the doped Ni molar percentage is more than 10.7%, the values of tan
δe become lower than that of SnO2@MWCNTs. These results suggest that the Ni-doped SnO2@MWCNTs composites have distinct dielectric loss properties with different doped Ni molar percentage. Fig. 6(g) shows that the values of tan
δm change from −0.38 to 0.21 from 0% to 35.4% doped Ni molar percentage, respectively. Comparing Fig. 6(f) with (g), it can be obviously observed that the values of tan
δe are much higher than tan
δm for all samples, indicating that Ni-doped SnO2@MWCNTs composites is a kind of dielectric loss types microwave absorbing materials.
Additionally, effective microwave absorber should accord to two factors. One is the impedance matching between the complex permittivity and the complex permeability, the other is electromagnetic microwave attenuation of the microwave absorber. Yet, the EM was determined by the attenuation constant α, suggesting in the following equation:39,40
![]() | (5) |
To further understand the mechanisms of dielectric loss of the microwave absorber, the Debye dipolar relaxation is often related, permittivity can be expressed by the following equation:1,36,42
![]() | (6) |
![]() | (7) |
![]() | (8) |
According to eqn (7) and (8), the relationship between ε′ and ε′′ can be described as following:
![]() | (9) |
![]() | (10) |
Based on eqn (9), the curves of (ε′ − ε′′) would be a single semicircle, denoting as the Cole–Cole semicircle. Each semicircle represents one Debye relaxation process. Fig. 7 shows that there are at least three semicircles in each curve of Ni-doped SnO2@MWCNTs with different doped Ni molar percentage. These results indicate that the Debye relaxation process can enhance the microwave absorbing properties of Ni-doped SnO2@MWCNTs composites. However, the Cole–Cole semicircle are distorted, suggesting that other mechanisms such as conductance loss, interfacial polarization or oxygen defects may beneficial to the microwave absorption.36,43
Fig. 8(a)–(f) show the calculated RL curves of Ni-doped SnO2@MWCNTs composites of different Ni doped molar percentage with different matching thicknesses of microwave absorbing layer in the range of 2–18 GHz. It can be seen that the maximum RL towards the low frequency with the increase of thickness. Fig. 8(a) depicts that the maximum RL reaches −21.6 dB at 8.6 GHz for SnO2@MWCNTs composites with a thickness of 2 mm. For 10.7% Ni-doped SnO2@MWCNTs composites, the maximum RL can reach up to −14.7 dB at 3.7 GHz with a thickness of 1.5 mm as shown in Fig. 8(c). When the Ni doped molar percentage was 10.7%, the microwave absorbing properties was poor compared to the other five percentage composites, just because the mismatch between the absorber and the air. The maximum RL values is of small change when the Ni doped molar percentage less than 10.7% (Fig. 8(b)), while with the doping content increasing (Fig. 8(d)–(f)), the change of the maximum RL becomes larger, and the largest maximum RL belongs to 28.2% Ni doping percentage in Fig. 8(e). For 28.2% Ni-doped SnO2@MWCNTs composites, the maximum RL reaches −39.2 dB at 8.2 GHz with the thickness of 2.5 mm. Further increases Ni doping percentage, however, the value of maximum RL changes slightly, and almost keep constant. Similarly, the widest microwave absorption located at 28.2% and 35.4% (Fig. 8(f)) Ni doping percentage, which can reach 3.6 GHz. Considering the maximum RL and the widest microwave absorption, the optimal doped Ni molar percentage is 28.2%, at which the Ni-doped SnO2@MWCNTs composites presents the excellent microwave absorbing properties, possibly due to the best impedance match characteristic.
![]() | ||
| Fig. 8 Reflection losses for Ni-doped SnO2@MWCNTs composites with different doped Ni molar percentage at different thicknesses in the frequency range of 2–18 GHz. | ||
The possible mechanisms of microwave absorption for Ni-doped SnO2@MWCNTs composites are schematic illustration in Fig. 9. On one hand, the small size of SnO2 nanoparticles is about 3–5 nm, which can be act as polarization center, enhancing the interfacial polarization effect too.44 Small size particles possess high anisotropy, which also make contributions to the microwave absorption.19 On the other hand, the Debye relaxation process is beneficial to attenuate the incident electromagnetic wave, and the high conductivity of MWCNTs plays an important role in the formation of conductive network.3 Besides, Ni ions doping can make it easier to form a conductive network in SnO2@MWCNTs composites. In addition, Ni ions doping can change the lattice parameters of SnO2@MWCNTs, Ni ions substituted Sn4+ ions in the lattice of tin oxide, lattice deformation can be good for the microwave absorption of SnO2@MWCNTs composites. Additionally, the large aspect ratio and the existence of residual defects and groups of the Ni-doped SnO2@MWCNTs composites could cause multiple reflections,45 which will further enhance the microwave absorbing ability. In general, the enhanced microwave absorbing performance of the composites is attributed to the synergistic effects of the MWCNTs, Ni ions, and SnO2 nanoparticles. Only with impedance match, high conductivity, high attenuation and reduced eddy current of the three components can make Ni-doped SnO2@MWCNTs composites have better microwave absorbing properties. Therefore, the Ni-doped SnO2@MWCNTs composites have a great potential as lightweight and high-efficiency electromagnetic wave absorbers.
![]() | ||
| Fig. 9 Schematic illustration of possible microwave absorption mechanisms of Ni-doped SnO2@MWCNTs composites. | ||
Footnote |
| † Electronic supplementary information (ESI) available. See DOI: 10.1039/c5ra17303e |
| This journal is © The Royal Society of Chemistry 2015 |