Electronic transport properties of in-plane heterostructures constructed by MoS2 and WS2 nanoribbons

Abstract

A new and simple kind of in-plane heterostructure is constructed by MoS₂ nanoribbons (MoS₂NRs) and WS₂ nanoribbons (WS₂NRs) arranged both perpendicularly and in parallel. The electronic transport properties of two-probe devices with these heterostructures are investigated by first-principle density functional theory and non-equilibrium Green function. The results indicate that for all these heterostructures, with the number of WS₂NR unit cell increasing, the bandgap decreases slightly and the negative differential resistance (NDR) effect can be tuned. Especially for the case with W atoms doping on the edge, it not only displays a notable NDR effect but also has a high current peak under low bias, which indicates that it shows a better performance applied as a logic transistor. This study may provide a new path for the creation of the novel nanoelectronic devices with good performance.