Jingfeng Huangabc,
Hu Chenab,
Wenbin Niua,
Derrick W. H. Famd,
Alagappan Palaniappanae,
Melanie Larisikaef,
Steve H. Faulknerc,
Christoph Nowakef,
Myra A. Nimmobcg,
Bo Liedberg*ae and
Alfred I. Y. Tok*ab
aSchool of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore. E-mail: miytok@ntu.edu.sg; Tel: +65 67904935
bInstitute for Sports Research, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore
cSchool of Sport, Exercise and Health Sciences, Loughborough University, Leicestershire, LE113TU, UK
dDepartment of Chemistry, Royal College of Science, Imperial College, Exhibition Road, London, SW72AZ, UK
eCentre for Biomimetic Sensor Science, Nanyang Technological University, 637553, Singapore
fAustrian Institute of Technology (AIT) GmbH, Donau-City Str. 1, Vienna, 1220, Austria
gThe University of Birmingham, College of Life and Environmental Sciences, Birmingham, B15 2TT, UK
First published on 24th April 2015
Graphene Oxide (GO) is analogous to graphene with oxygen moieties. It offers several advantages over graphene, such as a tunable band-gap, facile synthesis and no use of metal catalysts. Due to the monolayer configuration of GO, all of its carbon atoms are readily exposed to the atmosphere and are sensitive to surface perturbations, thus making GO very suitable for liquid-gated field effect transistor (FET) type sensing applications. However, there are two main limitations preventing GO usage in practical FET sensors. It displays (1) variable coverage between fabricated chips and (2) high electrical resistance. In this paper, we overcome these two limitations by using a facile atmospheric-pressure ethanol Chemical Vapor Deposition treatment on top of pre-coated GO (ECVDGO) which decreases the electrical resistivity from 1.99 × 106 Ω square−1 to 4.68 × 103 Ω square−1, and resistivity variation from 1.60 × 106 to 7.72 × 102 Ω square−1; whilst enlarging the surface GO coverage up to 100%. We then demonstrate the ability of the post-treated ECVDGO liquid-gated FET transducer to detect Interleukin-6 which is a multi-functional cytokine involved in regulating the immune function and the acute phase response. The sensing window of the fabricated biosensor to Interleukin-6 is within the physiologically-relevant range, from 4.7 to 300 pg ml−1. The LOD of the sensor based on 3σ is 2.9 pA or 1.53 pg ml−1. This study demonstrates the emerging potential of GO with high manufacturability in liquid-gated FET biosensors for sensitive and label-free detection of bio-molecules.
Furthermore, it had been reported recently that there is no difference in the measurement of plasma IL-6 using the more invasive venous versus the minimally invasive capillary blood sampling measurement.5 The possible use of capillary measurement meant a minimally invasive way to quantitatively monitor changes in plasma IL-6 levels. The use of capillary sampling is also a more accessible, tolerable and faster way for field-based blood measures, for example, during sport providing an ideal route for point-of-care testing. Thus the IL-6 protein has immense potential as a training and fatigue biomarker if it can be measured in real-time.
Currently, ELISA and western blotting are the gold standards for IL-6 detection.14 These techniques require substantial time, cost, machinery and specialist training; thus making real-time detection of IL-6 impossible. In contrast, a liquid-gated FET biosensor offers real-time monitoring and requires only a single antibody to capture the antigen and report a signal. When the target antigen binds to the antibody, it changes the environment near the surface of the transducer and alters its electrical conductance.15 Table 1 compares the sensitivity range of different types of biosensors to IL-6 reported recently. Although the sensitivity range of electrochemical immunoassay11 with modified carbon electrodes is much wider than that of the FET immunoassay reported in this work, it is noted that most electrochemical immunoassays require secondary markers or antibody labels as reporter molecule which involves additional costs and processing time.9–12 Using the reported real-time label-free graphene oxide sensor, the sensitivity range is within the physiological range of ∼10 pg ml−1 in sweat samples from healthy women16,17 which were not to be significantly different from plasma levels (p = 0.19;16).
Reference | Transducer | Platform | Sensitivity range (pg ml−1) | Note |
---|---|---|---|---|
Reported | Post-processed graphene oxide | FET immunoassay | 4.7–300 | Label-free |
6 | Microfabricated silicon flexural plate wave (FPW) resonators | Micro-electromechanical (MEM) immunoassay | 1.2-unknown | Label-free |
7 | Fiber-optic dip-probe | Optical immunoassay | 120–12![]() |
Label-free |
8 | Functionalized Biacore sensor chip | Surface plasmon resonance (SPR) immunoassay | 780 to 12![]() |
Label-free |
9 | SWCNTs/AuNPs | Electrochemical impedance immunoassay | 1 × 10−5–0.1 | AuNPs |
10 | Polymeric nanoparticles on calcium carbonate | Electrochemical immunoassay | 2–20![]() |
Porous polyelectrolyte nanoparticles label used |
11 | Modified carbon electrodes | Electrochemical immunoassay | 0.01–1 × 106 | PS@PDA-metal label used |
12 | Carbon nanotube forest electrodes | Electrochemical immunoassay | 0.5–30 | Ab2-MWNT-HRP label used |
13 | Functionalized fluorescent core–shell nanoparticles | Fluoro-immunoassay | 20–1250 | Fluorescent core–shell nanoparticles label used |
Graphene Oxide (GO) is analogous to graphene with oxygen moieties and has the distinct advantages of being solution processable, industrially scalable and a tunable electronic band-gap.18,19 Due to the monolayer configuration of GO, all its carbon atoms are exposed to the environment and the charge-carriers are confined to the surface of the sheets. Thus the electrical conductivity of the flake is very sensitive to local electrostatic perturbations.20 This property makes it suitable for sensing applications. GO biosensors have been reported for the detection/discrimination of antibody oxytetracycline (4 pg ml−1 to 1 μg ml−1),21 antibody Immunoglobulin E (1 pM to 10 nM),22 bacterium Vibrio cholera (0.12–5.4 nM),23 nucleic acid DNA (1.0 fM to 0.1 μM),24 tumour marker carcinoembryonic antigen (0.1 pg ml−1 to 20 ng ml−1)25 and monoamine catecholamine (1–10 mM).26
There are however, inherent limitations in GO that prevent it from being used as an ultra-sensitive and high-loading transducer in FET molecular sensing applications. These limitations need to be resolved before GO can be used in practical applications. For example, the coverage of GO on SiO2 substrate ranges from ca. 60–90% due to the inefficient self-assembly of GO flakes and undesirable cross-linking within the 3-AminoPropylTriEthoxy Silane (APTES) adhesion layer. APTES is commonly used in literature26–29 to form a positively-charged surface for the negatively-charged GO to self-assemble via electrostatic attraction. This incomplete coverage leads to variable available sensor surface area, and more importantly, high sheet resistance that limits the sensitivity of the biosensor.26
Various GO pre- and post-treatment such as ultrasonication to obtain larger GO sheets,29,30 short ethanol Chemical Vapor Deposition (CVD) treatment to obtain increased graphitization31 and hydrogen heat treatment to obtain improved reduction32 have been reported. However, none of these strategies can produce a combination of these solutions.
In this paper, we demonstrate a post-treatment of GO using atmospheric ethanol CVD which can increase the size, graphitization and reduction of GO and thus removing limitations of high electrical resistance and variability to yield a practical liquid-gated FET transducer platform suitable for real-time and sensitive detection of molecules. The ethanol CVD post-treated GO is termed ECVDGO. We then determine the sensing characteristics and window of the sensor to IL-6 proteins.
Standard procedure involving RCA cleaning of SiO2 substrates was employed. The substrates were then immersed in 1% v/v (3-aminopropyl)triethoxysilane absolute–ethanol solution for 1 h in a dry box followed by rinsing thoroughly with ethanol to remove physisorbed APTES. The substrates were then baked in an oven for 1 h at 120 °C to introduce crosslinking.34 The prepared GO solution was drop-casted on the substrates and left to stand for 1 hour. APTES covalently attaches to the hydroxyl groups of the freshly cleaned SiO2 surface and modifies the surface with –NH3+ groups to become positively charged.34 The GO, which is negatively charged in aqueous media of low to medium pH, then electrostatically attaches to the surface. Finally, the prepared substrates with 1–2 layers of GO were rinsed, blow-dried and kept in desiccator.
Then 30 μl of 6 mM 1-pyrenebutanoic acid, succinimidyl ester (PBSE) linker molecules with DMF were placed into the well for 1 hour and then rinsed thoroughly. IL-6 antibody were subsequently incubated on the surface for 2 hour and rinsed. The ECVDGO sensor was then blocked with bovine serum albumin and ethanolamine in fetal bovine serum to prevent non-specific interferences. The chips were kept under moist conditions at 4 °C before measurement.
After a partial 30 minute treatment with the ethanol CVD, the coverage can be increased from 60 to 80%. The growths are highlighted in yellow in Fig. 2b. Fig. 2c shows a higher magnification SEM image that indicate that the growth extension starts from the edges of existing flakes and continues outwards into the empty gaps between flakes. The new growth also covers existing flakes. As the ethanol CVD treatment continues to 2 hours, the new growths cover all the gaps between pre-existing new gaps completely.
Raman spectroscopy (488 nm) was used to confirm the complete coverage of the 2 hours ethanol CVD treated samples. A contrast between the existing flakes and new growth extensions can be observed in the microscope image in Fig. 3a. This contrast is due to the thickness difference between the new growth and pre-existing flakes on SiO2,37 where the darker contrast area indicates thicker layer. The presence of new growth extensions was confirmed in the Raman mapping shown in Fig. 3b. The 2D Raman spectrum (23 cm−1 difference) was used to distinguish the existing flakes from the new growth extension because the former has an upshifted position that is due to increased number of graphene layers19,38
To quantify the improvement in electrical conductivity, 5 samples of 2 hour ECVDGO and hydrazine-reduced GO29 were measured under the 4-point probe setup. All the chips were made in a single batch for accurate comparison. The measured electrical resistance of the ECVDGO sample decreased from 1.99 × 106 to 4.68 × 103 Ω square−1 compared to hydrazine reduced samples, whilst the relative standard deviation of ECVDGO samples decreased from 80.4% to 16.5%. Thus the ethanol CVD post-processing treatment reduced the electrical variability of GO across the samples and also improved the electrical conductivity.
The ECVDGO samples were then fabricated into back-gated transistor to measure the transfer characteristic transistor output under ambient temperature and pressure. Channel length of 100 μm was fabricated to ensure bulk-limiting transport behaviour and decrease the role of contacts. The linear output behaviour of the back-gated device (Fig. 4a) at various gate voltages shows good ohmic contact between the transducer and the electrodes. The device is stable in large gate voltages (VG) ranging from −100 V to +100 V. The corresponding transfer curve (ISD–VG) of the transistor under drain bias voltage, VD = 0.1 V, is shown in Fig. 4b. The current of the transfer curve are much higher at negative gate voltages compared to positive voltages. These indicate that the holes are the main charge carriers of ECVDGO under ambient condition.
The ECVDGO material was then used to fabricate liquid gated transistors for IL-6 sensing application and the shift in source-drain current (ISD) of the anti-IL-6 immobilized ECVDGO transistor is sensitive to increasing concentrations of IL-6 protein due to electronic n-doping of the device. Fig. 5a shows that binding of increasing amounts of IL-6 protein to the anti-IL-6 antibody results in a down-shift of the ISD–VG curve, from 21.09 μA (0 pg ml−1) to 20.96 μA (300 pg ml−1) at VG = 0 V.
Low gate voltages were used to minimize possible disturbances to the biological sample and prevent instability of the biosensor due to electrochemical and charging effect.26 The sensor was operating in the p-type region at VG = 0 V and the negative shift is tentatively attributed to the electrostatic gating effect on the ECVDGO surface.
Increasing density of overall positive charges from the immune-complex induces negative charges in the ECVDGO. This n-doping shifts the transconductance curve to more negative gate volatges.15,39 Additionally, responses could also be due to a decreased ionic screening effect after the protein–antibody interaction.40–42 The decrease in ISD corresponds to a sensitivity of 1.5 pA per pg ml−1 of IL-6. The slope of the ISD–VG curve does not change thus indicating that the charge carrier mobility in the ECVDGO transducer remains the same after the protein–antibody reaction. It is noted that ISD downshift (electrostatic gating effect) exhibited in our biosensor is more reproducible and reliable than other effects using Schottky barrier and changes in gate coupling and carrier mobility.15
The change in ISD can then be utilized to be a sensor for the IL-6 concentration by fixing the gate voltage value. The general trend of the ISD decreasing with increasing concentration of IL-6 is evident in the calibration curve (Fig. 5b). The linear dynamic range (LDR) of the sensor is from 4.7 to 18.8 pg ml−1 of IL-6. Although at higher concentrations, the change in the sensor electrical signal was not much higher than at 18.8 pg ml−1, but the sensor still acts as an active material that gave a reliable reading against IL-6 concentrations (Fig. 5b insert). The slightly non-linear relationship between Interleukin-6 concentration and the decrease of measured source-drain current could be attributed to the carrier injection during the I–V measurement.43 It has also been commonly observed for carbon-based FET biosensors.26,43–46 Further studies are needed to reveal the details of the sensing mechanisms. Fig. 5c shows no change in the ISD when the sensor is exposed to interference protein, BSA. This shows the sensor resistance (after IL-6 attachment and blocking agent protection) in preventing interferences and unspecific binding.
The LOD of the ECVDGO sensor based on 3σ is 2.9 pA (equivalent to 1.53 pg ml−1). Plasma IL-6 levels in physically active individuals have been reported to be as low as ≤1 pg ml−1 (ref. 3 and 47) while levels in sedentary middle-aged men ∼11 pg ml−1 and healthy premenopausal women have been reported in the range of ∼10–11 pg ml−1.16 Following prolonged exercise such as cycling, IL-6 can be elevated as much as 38 fold, and as much as 128 fold following completion of a marathon;3 therefore the detection range of the reported sensor is within the physiological range of IL-6.
The eventual end point application would be for point of care and whole blood analysis. Thus the ability of the ECVDGO sensor to sensitively and selectively detect the biomarker in serum demonstrates its relevance to potential usage in medical diagnostics. Future work from the results of this experiment could be used to develop portable, real-time, low-cost and robust amperometric biomarkers detection array, kinetic study platform for the study of liposomes48 and synthetic aptamers.
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