Issue 67, 2015
From the journal:

Chemical Communications

Pro-aromatic bisphenaleno-thieno[3,2-b]thiophene versus anti-aromatic bisindeno-thieno[3,2-b]thiophene: different ground-state properties and applications in field-effect transistors†

Xueliang Shi,a   Sangsu Lee,b   Minjung Son,b   Bin Zheng,c   Jingjing Chang,a   Linzhi Jing,a   Kuo-Wei Huang,c   Dongho Kim*b  and  Chunyan Chi*a  

* Corresponding authors

a Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, Singapore
E-mail: chmcc@nus.edu.sg

b Spectroscopy Laboratory for Functional π-Electronic Systems and Department of Chemistry, Yonsei University, Seoul 120-749, Korea
E-mail: dongho@yonsei.ac.kr

c KAUST Catalysis Center and Division of Physical Sciences & Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

Abstract

A pro-aromatic bisphenaleno-thieno[3,2-b]thiophene (BPT-TIPS) was synthesized and compared with an anti-aromatic bisindeno-thieno[3,2-b]thiophene (S2-TIPS). BPT-TIPS showed larger diradical character, stronger absorption, longer excited state lifetime and better redox amphotericity than S2-TIPS.

Graphical abstract: Pro-aromatic bisphenaleno-thieno[3,2-b]thiophene versus anti-aromatic bisindeno-thieno[3,2-b]thiophene: different ground-state properties and applications in field-effect transistors

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Article information

DOI
https://doi.org/10.1039/C5CC04243G
Article type
Communication
Submitted
22 May 2015
Accepted
01 Jul 2015
First published
06 Jul 2015

Chem. Commun., 2015,51, 13178-13180

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Pro-aromatic bisphenaleno-thieno[3,2-b]thiophene versus anti-aromatic bisindeno-thieno[3,2-b]thiophene: different ground-state properties and applications in field-effect transistors

X. Shi, S. Lee, M. Son, B. Zheng, J. Chang, L. Jing, K. Huang, D. Kim and C. Chi, Chem. Commun., 2015, 51, 13178 DOI: 10.1039/C5CC04243G

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