Ping Yang*a,
Hsueh-Shih Chenb,
Sha Zhanga,
Jie Zhaoa,
Yingying Dua,
Yanping Miaoa,
Haiyan Hea and
Yunshi Liua
aSchool of Material Science and Engineering, University of Jinan, Jinan, 250022, P. R. China. E-mail: mse_yangp@ujn.edu.cn
bDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
First published on 2nd September 2014
CdSe/Cd0.5Zn0.5S core/shell quantum dots (QDs) with high photoluminescence (PL) efficiency up to 85% were fabricated in organic solutions at high temperature via an anisotropic shell growth on CdSe nanorods. The core/shell QDs with PL peak wavelengths from green to red were obtained by controlling the size of the cores and the thickness of the array Cd0.5Zn0.5S shells. Both the cores and the core/shell QDs revealed narrow size distributions which resulted in narrow PL spectra. Green-emitting CdSe cores with a Se-rich surface revealed a long average lifetime of ∼44 ns. After being coated with Cd0.5Zn0.5S shells, the average lifetime of QDs decreased drastically up to ∼23 ns. The average decay time of the core/shell QDs depended on their shell thickness. The temperature-dependent PL in a temperature range of 293 to 393 K was investigated for CdSe cores and highly luminescent CdSe/Cd0.5Zn0.5S core/shell QDs. Luminescent quenching occurred with increasing temperature for the cores even though the cores exhibited high crystallinity. In contrast, with increasing temperature, the emission PL peak wavelength of the core/shell QDs shifts towards lower energies, the PL bandwidth increases a little and the PL efficiencies decrease slightly. The red-shifted degree of the PL spectra with temperature is small (less than 10 nm).
It is well known, the band gap of bulk semiconductors depends strongly on temperature. In the case of nanoparticles, this dependence takes into account among the surface defects, the change in lattice parameter, and the temperature dependence of the electron–lattice interaction because of the particle sizes. The PL properties of QDs, such as spectral width and Stokes shifts, are depended strongly on the band gap and surface state. The study of PL spectra and PL-decay profiles is important and necessary to understand the temperature-dependent feature because the operating temperature is either elevated or reduced in many of the potential applications of semiconductor QDs. The defect-related PL spectrum with a large Stokes shift of the QDs is dominant, and the band-edge PL band is negligibly weak. The defect-related PL resulted in a difficulty to understand the temperature-dependent feature. It is necessary to prepare QDs with high PL efficiency to understand the mechanism of temperature-dependent PL. Recent development in the synthesis of colloidal QDs can allow many sophisticated nanostructures like core/shell heterostructures.3 For example, CdSe/ZnS and CdSe/ZnCdS core/shell QDs can exhibit bright and more stable PL compared with bare CdSe cores. Such bright PL is ascribed to a shell passivation which decreased the surface defects. The study of synthesis kinetics of the QDs makes a possibility to discuss the temperature-dependent PL of the QDs.
The study of synthesis kinetics promotes to understand the PL mechanism of QDs. The temperature dependent PL of QDs is ascribed that the variation of band gap can provide insight into the exciton relaxation process and exciton–phonon interactions.1 However, the study on the temperature dependence of semiconductor nanocrystals have been rare and mostly limited to CdSe, CdSe/ZnS and ZnSe.5–9 It is important and necessary to understand this feature, due to the potential applications of semiconductor QDs, the operating temperature is either elevated or reduced.10 For instance, Li et al. reported on the use of single QD as local temperature markers in the temperature range in the temperature range 25–50 °C.11 The temperature dependence of PL is normally investigated at low temperature (e.g. less than room temperature). This may limit the application of QDs.
In this paper, we prepared CdSe cores with high crystallinity via an organic synthesis. Green-emitting CdSe cores with rice-like morphology revealed PL efficiency of 10% while that of red one (a PL peak of 624 nm) with a rod shape is 1%. The cores were coated with a Cd0.5Zn0.5S shell to get a high PL efficiency up to 85%. Both of the cores and core/shell QDs revealed narrow size distribution. The decay time of the cores and core/shell QDs was investigated. The core/shell QDs revealed a short average life time compared with the cores. The temperature dependence of PL was investigated from 293 to 393 K. The PL spectra of the core/shell QDs were red-shifted with increasing temperature. However, the PL of the cores was quenched with increasing temperature. Because the core/shell QDs exhibited narrow PL spectra and still retained relative high PL efficiencies with increasing temperature, they will be utilizable for further applications.
The synthesis of CdSe cores were completed in N2 atmosphere by modifying a published method.12 Typically, CdO of 0.54 mmol was added in a three-neck round-bottom flask with 180 mg of ODPA, and 5 mL of TOA with N2 flowing and stirring at 300 °C until the CdO completely dissolved. The TOPSe solution with Se powder of 1 mmol and 1.5 mL of TOP was then injected into the precursor solution of cadmium with vigorous stirring. The solution was then kept at 300 °C for 2 min, followed by cooling down to room temperature. After that, 15 mL of hexane and 50 mL of ethanol were added to precipitate samples. The resulting sample was centrifuged, washed with copious ethanol, and re-dispersed in 15 mL of toluene. Finally, samples were precipitated with ethanol, and re-dispersed in 15 mL of toluene for subsequent shell coating.
To coat with a CdxZn1−xS shell on CdSe cores, typically, a Cd and Zn precursor with Cd(Ac)2·2H2O of 0.05 mmol, Zn(Ac)2 of 0.05 mmol, 2 mL of OA, and 5 mL of TOA were prepared in a three-neck round-bottom flask with N2 flow and stirring at 300 °C. The toluene solution of CdSe cores was injected in the precursor solution with vigorous stirring, followed by the injection of the TOPS solution with S powder of 0.20 mmol and 0.5 mL of TOP. The mixture was kept at 300 °C with stirring for further certain time, followed by cooling down to room temperature. The resulting samples were precipitated, washed with ethanol, and re-dispersed in 15 mL of toluene.
Elemental analysis of QD samples was performed using an inductively coupled plasma atomic emission spectrometer (IR1S Advantage, Nippon Jarrell-Ash Co. Ltd.). The molar ratio of Zn/Cd in the shell was estimated through minus the Cd amount of the cores used during preparation of the shell. The concentration of QDs was estimated by their adsorption at first absorption peak. Transmission electron microscopy (TEM) observations were carried out using JEM 2100 (JEOL Ltd.) and H-1000 (Hitachi) electron microscopes. The absorption and PL spectra of samples were recorded using Hitachi F-4600 and U-4100 spectrometers, respectively. Both excitation and emission slits used for the measurement of PL spectra are 5 nm. PL lifetime measurements were carried out using the time-correlated single-photon-counting spectrofluorometer system (λex = 370 nm, Fluorocube-01, JY-IBH, Horiba). The PL efficiency of samples was estimated in comparison with a standard rhodamine 6G solution (PL efficiency η0 of 95%) under the similar optical path length and optical density conditions.13,14
Sample | Composition | Core used | FWHM (nm) | PL efficiency (%) | PL peak wavelength (nm) |
---|---|---|---|---|---|
1 | CdSe | N/A | 23.8 | 10 | 557 |
2 | CdSe/Cd0.5Zn0.5S | Sample 1 | 25.4 | 85 | 590 |
3 | CdSe/Cd0.5Zn0.5S | Sample 1 | 26.8 | 79 | 594 |
4 | CdSe/Cd0.5Zn0.5S | Sample 1 | 27.2 | 76 | 597 |
5 | CdSe | N/A | 24.6 | 1 | 624 |
6 | CdSe/Cd0.5Zn0.5S | Sample 5 | 28 | 61 | 652 |
Sample | QDs | Cd (mmol) | Zn (mmol) |
---|---|---|---|
5 | CdSe | 1.13 × 10−3 | N/A |
6 | CdSe/Cd0.5Zn0.5S | 2.23 × 10−3 | 1.15 × 10−3 |
Fig. 2 shows the TEM images of initial CdSe cores (samples 1 and 5) and CdSe/Cd0.5Zn0.5S core/shell QDs (samples 2, 3, 4, and 6). Sample 1 (CdSe QDs) revealed a rice-like morphology as shown in Fig. 2a while sample 5 exhibited a rod shape as shown in Fig. 2e. The well-developed lattice fringe of CdSe QDs was observed in the insets in Fig. 2a and e. The CdSe QDs have fine crystallinity which indicates the QDs with less surface defects. However, the PL efficiency of the QDs is low as indicated in Table 1 (10% for sample 1 and 1% for sample 5). This is ascribed a Se-rich surface which decreases the edge emission of the QDs. After being coated with a Cd0.5Zn0.5S shell, the length of the core/shell QDs barely increased in comparing with that of the cores. This is ascribed to an anisotropic growth during shell coating. With increasing reflux time, the thickness of the Cd0.5Zn0.5S shell increased. Because of ligands adsorbed on polar {001} facets of CdSe in a TOP–ODPA–TOA solution, CdSe QDs prepared at high temperature exhibits a hexagonal crystal structure and prefers to grow along the {002} direction (length direction). A CdS shell prefers to grow on the {00} facet (diameter direction) of CdSe. Therefore, Cd0.5Zn0.5S shell did not deposit on the reactive {002} planes at the CdSe nanorod ends.
To further investigate the effect of Cd0.5Zn0.5S shell on the properties of CdSe cores, Fig. 3 shows the luminescence decay curves of samples 1 to 4 measured at the maximum PL peak, λex = 370 nm. Reproduced curves for data shown in Table 3 are plotted as thin white lines in Fig. 3. A biexponential function as follows was used to fit the decay curves:
F(t) = A + B1![]() ![]() |
τav = (B1τ12 + B2τ22)/(B1τ1 + B2τ2) |
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Fig. 3 PL decay curves (measured at maximum emission peak, λex = 374 nm) of CdSe cores and CdSe/Cd0.5Zn0.5S core/shell QDs (samples 1 to 4). Reproduced curves for data shown in Table 3 are plotted as thin white lines. |
Sample | Composition | B1 (%) | τ1/ns | B2 (%) | τ2/ns | τav/ns |
---|---|---|---|---|---|---|
1 | CdSe | 33 | 10.5 | 67 | 47.7 | 44.1 |
2 | CdSe/Cd0.5Zn0.5S | 19 | 10.6 | 81 | 29.9 | 29.9 |
3 | CdSe/Cd0.5Zn0.5S | 23 | 8.7 | 77 | 30.2 | 28.5 |
4 | CdSe/Cd0.5Zn0.5S | 27 | 3.9 | 73 | 24.4 | 23.2 |
Average life time τav values are shown in Table 3. Because of fluctuation in the fluorescence decay or the stochastic nature of the ground-state dipole moment,17 the PL decay plot of CdSe cores is also fitted well by biexponential. For CdSe cores, the fast decay (τ1) is 10.5 ns and the slow one (τ2) is 47.7 ns, corresponding to the recombination of intrinsic excitons and the interplay between excitons and surface traps, respectively.18 The average fluorescence lifetime τav of sample 1 is 44.4 ns. The biexponential dynamics indicates more than one radiative recombination channel of excitons existed. Compared with the CdSe cores, the core/shell QDs (samples 2 to 4) have a small value of τ1 and τ2 components, resulting in a decreased average lifetime (τav). The average lifetime τav of samples 2 to 4 are 29.9, 28.5, and 23.2 ns, respectively as illustrated in Table 3. With increasing the thickness of the shell, the average lifetime decreased. This lifetime lengthening for a thin shell and shortening again for a thick shell might be related to the variation of thickness and composition of the shell because the shell structure will influence the exciton recombination process.
To extract the radiative lifetime from the PL decay time usually a suited kinetic model has to be applied providing a reasonable fitting function.19 The decay curves show best-fitting parameters by using biexponential fitting functions. For CdSe/Cd0.5Zn0.5S core/shell QDs, the shell growth, which happens in an epitaxial manner, eliminates nonradiative traps at the core/shell interface, and the intrinsic excitons can be confined well within QDs by a thick shell, so there is a lower possibility that excitons are trapped at surface states around QDs' surroundings.18 Furthermore, the average fluorescence lifetime of QD heterostructures increased when wide band gap CdS and ZnS shells over coated. This is ascribed to the position of the energy levels of semiconductor heterostructures having strong size- and composite-dependences, making the degree of carrier localization in core/shell QDs strongly sensitive to the dimensions of both the core and shell.13 For CdTe/CdS core/shell QDs, the lifetime increased after a CdS shell coating.20 However, in our experiments, the core/shell QDs had a decrease in their average fluorescence lifetime compared with the cores. Both of τ1 and τ2 components decreased for the core/shell QDs compared with the cores. Such effect with high PL efficiency maintenance is explained by the reduction in the nonradiative decay channel for CdSe/Cd0.5Zn0.5S QDs. Most possibly, this is ascribed to the Se-rich surface of CdSe cores who revealed a long lifetime compared with in literature.21 Compared with sample 1 (CdSe cores), sample 2 (CdSe/Cd0.5Zn0.5S QDs) exhibited similar τ1, decreased τ2, decreased B1, and increased B2. The increased B2 in the PL decay curves is ascribed to the radiative recombination of carriers because it accounts for more and more of the total PL when the efficiency of QDs is increased.19,21,22 The decreased lifetime is ascribed to the CdS interlayer which increases the radiative decay channel. The same cation at the surface a CdSe core and a CdS interlayer results a larger band offset in the conduction band. Therefore, the wave function of the electron can dislocate in the shell completely. An additional ZnS outside shell with a substantially wide band gap efficiently confine both electrons and holes within the CdSe/Cd0.5Zn0.5S QDs and substantially enhancing the spatial indirect radiative recombination.
The temperature-dependence of the band gap (Eg) of bulk semiconductors is well described by the Varshni relation, which has been shown to be also valid for semiconductor QDs,23
Eg = E0 − αT2/(T + β) | (1) |
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Fig. 4 Red-shifted PL peak wavelengths of CdSe/Cd0.5Zn0.5S core/shell QDs with increasing temperature. |
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Fig. 5 Temperature dependence of PL spectra of CdSe/Cd0.5Zn0.5S core/shell QDs at different temperatures. Dash line at 373 K and solid line at room temperature. |
In temperature dependent PL spectra of core/shell QDs, the PL peak shapes remain symmetric. The PL intensity of the QDs decreased slightly. This is ascribed to the change of ligand on the surface with increasing temperature. The PL peak wavelength of the QD was red-shifted with increasing temperature. Typically, the radiative channels become more dominant and the effective band gap increases as temperature decreases. This phenomenon may also be explained by an Arrhenius equation. In addition, we did not observed the red-shift of PL peak wavelength of CdSe cores. The PL of CdSe cores was quenched with heat-treatment. This is ascribed to the cores with high crystallinity which normally expects good phonon property which favors temperature quenching. The thermal quenching of PL competes with radiative exciton recombination and can be explained in terms of the decomposition of excitons. Nonradiative recombination generated by the decomposition of excitons. Therefore, the temperature quenching of the QDs are observed, both in colloidal suspensions and in solvent-free systems, such as the QDs in polymeric matrices.24 Similar phenomenon was observed in our previous paper.13 Green emitting CdTe QDs with low crystallinity revealed PL quenching because of the change of their surface state with increasing temperature. In current experiment, the PL of CdSe cores quenched with increasing temperature because of their Se-rich surface which is the origin of decreasing edge emission. Furthermore, the core/shell QDs did not exhibit PL temperature quenching because of their high PL efficiency.
In fact, the major nonradiative carrier relaxation channel in semiconductors is due to phonon quenching.25 The nonradiative rate becomes high when the phonon coupling is strong, and the PL is more sensitive to temperature change.26 Therefore, the PL efficiency of QDs decreases normally with increasing temperature. In our experiments, the PL intensity of CdSe/Cd0.5Zn0.5S QDs decreased slightly with increasing temperature.
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