Ying Yina,
Jiecai Hana,
Xinghong Zhanga,
Yumin Zhanga,
Jigang Zhouc,
David Muirc,
Ronny Sutartoc,
Zhihua Zhangd,
Shengwei Liu*e and
Bo Song*ab
aCenter for Composite Materials, Harbin Institute of Technology, Harbin 150080, China. E-mail: songbo@hit.edu.cn
bAcademy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150080, China
cCanadian Light Source Inc., Saskatoon, Saskatchewan S7N 0X4, Canada
dLiaoning Key Materials Laboratory for Railway, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China
eState Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China. E-mail: sliu@whut.edu.cn
First published on 21st July 2014
High-quality few-layer-thick graphitic carbon nitride (g-C3N4) nanosheets (NSs) were fabricated by a simple, highly efficient, and rapid method namely, liquid ammonia (LA)-assisted lithiation. Li intercalation occurred in less than half an hour, importantly, the degree of Li intercalation was indicated by the color change of LA solution from deep blue to colorless. The obtained products were carefully investigated by field-emission transmission electron microscopy, field-emission scanning electron microscopy, atomic force microscopy, X-ray powder diffraction, X-ray photoelectron spectroscopy, Raman scattering spectrometry, UV-visible absorption spectrometry, photoluminescence, soft X-ray absorption and nonresonant soft X-ray emission spectroscopy, and X-ray absorption near-edge structure analyses. Because of the lack of high-temperature or high-energy treatment, high-yield few-layer-thick g-C3N4 NSs were produced with trace O2 impurity. Interestingly, while maintaining the similar crystal structure and chemical stoichiometric ratio relative to the parent bulk materials, the surface structure, electronic and optical properties were significantly varied. Moreover, compared to the bulk counterparts, the as-prepared g-C3N4 NSs show clearly enhanced photocatalytic redox activity with respect to both photocatalytic H2 evolution and hydroxyl radical generation. LA-assisted lithiation is a general method and could be easily extended to exfoliate diverse other layered materials such as molybdenum and tungsten sulfides.
Recently, as a new type of 2D-layered material, metal-free graphitic carbon nitride (g-C3N4) NSs have received increasing attention.12–14 In particular, this fascinating semiconductor with a bandgap of ∼2.64 eV has been intensively investigated as an alternative metal-free visible-light-responsive photocatalyst.15–21 g-C3N4 has a graphite-like structure with strong C–N covalent bonding in the in-plane direction and weak van der Waals forces between the C–N layers with a layer distance of ∼3.3 nm.15–21 This intrinsically layered structure allows to exfoliate bulk materials to afford a monolayer or atomically thick g-C3N4 NS.12–14 Compared to the bulk g-C3N4, the highly anisotropic 2D NSs may possess a much higher specific surface area, a larger bandgap because of the quantum size effect, improved electron transport ability along the in-plane direction, and increased lifetime of photoexcited charge carriers because of a higher separation efficiency.12–14 Liu et al. reported that g-C3N4 NSs with a thickness of ∼2 nm can be obtained by the thermal oxidation etching of bulk g-C3N4 in air.12 However, the thermal oxidation etching afforded only ∼6 wt% yield.9 Zhang et al. reported a water-mediated exfoliation method to prepare g-C3N4 NSs.13 The exfoliation process was significantly influenced by the surface energy of the solvent molecules. Yang et al. reported an isopropanol-mediated exfoliation method to obtain g-C3N4 NSs with enhanced performance in photocatalytic H2 evolution.14 Although solvent-mediated exfoliation methods are feasible, their efficiency is low. Therefore, it is still challenge to develop an effective method to fabricate few-layer-thick g-C3N4 NSs.
Herein, we report a simple and efficient method to fabricate few-layer-thick g-C3N4 NSs by a LA-assisted Li intercalation method. Because of the high surface/bulk ratio, the as-prepared g-C3N4 NSs exhibited enhanced photocatalytic performance compared to their bulk counterpart. Significantly, this LA-assisted lithiation method is versatile and effective to exfoliate other 2D-layered materials such as MoS2 and WS2 in a large scale and high yield, providing additional opportunities to meet the intense demand for practical catalytic, biological, and electrical applications. To the best of our knowledge, this is the first report on the synthesis of few-layer-thick 2D g-C3N4, MoS2, and WS2 NSs by the LA-assisted lithiation method.
Fig. 2a shows the TEM image of the as-prepared samples; which are transparent to electron beams because of their ultrathin thickness, indicating that NSs were obtained. The inset in Fig. 2a shows the HRTEM image of the as-obtained NSs. The obtained lattice spacing of 0.35 nm was assigned to (100) plane, confirming that the products still contain hexagonal g-C3N4 (ICDD-PDF-4+ no. 00-04-0836) as the bulk counterparts. The energy-dispersive X-ray spectroscopy (EDS), with a detection limit of 1–2 at. %, of the as-prepared g-C3N4 NSs (Fig. 2b) detected mainly C and N elements with a nominal atomic ratio of 3:
4 without the presence of Li in the samples, indicating that metal Li metal only helps to exfoliate the layered structures and eliminated completely. The observed trace O element may have originated from the absorption of O2 or H2O when the as-prepared samples were exposed to air. The thickness of the as-prepared g-C3N4 NSs was measured by AFM (Fig. 2c); clearly, the height of a random NS fragment is ∼2.5 nm (Fig. 2d), which is approximately seven C–N layers in contrast to its parent (bulk) source consisting of hundreds of layers, indicating that few-layer-thick g-C3N4 NSs were obtained. Notably, the as-prepared few-layer-thick g-C3N4 NSs well dispersed in DI water even after storing for one month under ambient conditions (ESI, Fig. S2†). Further, the chemical composition of g-C3N4 NS was investigated by energy-filtered TEM (Fig. 3 and ESI, Fig. S3†). The uniform distribution of C and N elements confirms that this method facilitates a nondestructive exfoliation of g-C3N4, and no residual Li element was detected. Further, the SEM images (ESI, Fig. S4†) show that the as-exfoliated g-C3N4 NSs maintained the same lateral scale range as the parent (bulk) g-C3N4, but show a few-layer-thick feature in thickness.
To better understand the crystal structure, the as-prepared g-C3N4 NSs were characterized by XRD as shown in Fig. 4. Clearly, the exfoliation of few-layer-thick g-C3N4 NSs from bulk g-C3N4 induced considerable change in the XRD pattern. In contrast to bulk g-C3N4, the typical diffraction peak at 13.1°, which stems from the lattice planes parallel to the c-axis, disappeared in the XRD pattern of g-C3N4 NSs. Moreover, the intensity of the diffraction peak at 27.6° corresponding to the (002) plane decreased remarkably. Both these changes confirm that the bulk g-C3N4 was successfully exfoliated into few-layer-thick NSs, consistent with the abovementioned characterization results.
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Fig. 4 XRD patterns of bulk g-C3N4 and g-C3N4 NSs. Inset shows a schematic diagram of the fabrication of the g-C3N4 NSs by LA-assisted lithiation. |
The electronic structure of the as-prepared g-C3N4 NSs was investigated by the combined analysis of optical absorption and PL spectra. As shown in Fig. 5a, the intrinsic absorption peak of g-C3N4 NSs shows a distinct blue shift of ∼10 nm compared to bulk g-C3N4.12 The PL spectra show a clear blue shift from 459 nm (bulk g-C3N4) to 449 nm (g-C3N4 NSs) (Fig. 5b). Both these typical blue shifts can be attributed to the quantum confinement effect resulting from the shifting of conduction and valence bands in opposite directions.13,14 In addition, g-C3N4 NSs shows a stable PL peak without apparent shift under different excitation wavelength (Fig. S8†) and varied excitation intensity (Fig. S9†), implying its intrinsic stimulated emission mechanism.
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Fig. 5 (a) UV-visible absorption and (b) fluorescence emission spectra of g-C3N4 NS and bulk g-C3N4. |
It is well established that XANES is highly sensitive and can be used to determine the changes in the valence of atoms in a matrix. To further investigate the electronic and chemical structures of the as-prepared g-C3N4 NSs, C and N K-edge XANES and XES spectra of the g-C3N4 NSs were obtained using the bulk g-C3N4 as the reference. The identical XES and similar XANES spectra (Fig. 6a) between the g-C3N4 NSs and bulk matrix proved that the as-prepared g-C3N4 NSs maintained the major structure as the bulk material. The XES spectra of g-C3N4 (Fig. 6a), both NSs and bulk material, are close to that of graphite, but apparently different from crystalline β-C3N4 because of the difference in bonding.16
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Fig. 6 (a) XES and XANES C K-edge for g-C3N4 NSs and bulk g-C3N4. (b) XAS N K-edge for g-C3N4 NSs and bulk g-C3N4. (c) XES measurements of g-C3N4 NSs and bulk g-C3N4 at the N K-edge. |
The XANES spectrum of g-C3N4 at the C K-edge is composed of a sharp π* (CN) transition at ∼288 eV and a broad σ* peak at ∼294 eV. The N K-edge XANES spectra (Fig. 6b) are composed of a broad σ* transition peak located at 407 eV and two π* peaks located at 399 and 402 eV, which have been assigned to the pyridine- and graphite-like N bonding in g-C3N4, respectively.22,23 Interestingly, the surface-sensitive TEY mode XANES measurements show clear structural differences in the g-C3N4 NSs than bulk-sensitive XES measurements. The g-C3N4 NSs exhibit a stronger π* feature in both the C and N K-edge XANES spectra, predicting a better electronic conductivity. Furthermore, the σ* peak in the C K-edge XANES in the g-C3N4 NSs shifted to a higher energy direction, indicating that the shortening of C–N bonds in plane was probably induced by the presence of a strain in g-C3N4 NSs after the exfoliation, and similar results have been observed in graphene.24,25 Moreover, the XANES spectra of g-C3N4 NSs at the C and N K-edges show a lower-energy shoulder beside the first π* orbital, indicating the presence of more dangling bonds in g-C3N4 NSs. The spectrum of g-C3N4 NSs is slightly broader with higher intensity, indicating that the g-C3N4 NSs have better electronic conductivity (Fig. 6c). Notably, the band structure determined by XES and XAS is seemingly different from the results of UV-visible and PL measurements. The UV-visible result (Fig. 5a) indicates that the bandgap widens, while the XES and XAS results indicate that the bandgap narrows. A possible reason for this discrepancy is that XAS at TEY is surface sensitive (<5 nm deep), while XES is bulk sensitive. All these results confirm a rich electronic structure modification in g-C3N4 NSs but mostly confined to surface, while the g-C3N4 NS sample still retained the same structure as the bulk counterpart.
The composition and chemical states of the g-C3N4 NSs were also investigated by XPS (ESI, Fig. S5†). The C 1s peak located at ∼283.5 eV originates from the standard reference C, while that located at ∼287.5 eV represents the sp2-bonded C of g-C3N4.15–21 The XPS results indicate that the as-exfoliated g-C3N4 NSs are of high purity and mainly composed of C and N. Compared to the bulk g-C3N4, the binding energy of the g-C3N4 NSs shifted to a higher binding energy because of the size effect. The O content slightly increases from 3% (bulk g-C3N4) to 5% (g-C3N4 NSs), and the tiny amount of oxygen element in bulk g-C3N4 and g-C3N4 NSs could be ascribed to the tiny amount of O2 or H2O adsorbed on the surface when exposed to the air or during the ultrasonication process in deionized water, which is a common phenomenon in the synthetic g-C3N4.13 The atomic ratio of C to N decreased from 0.74 in the bulk g-C3N4 to 0.69 in the g-C3N4 NSs (ESI, Table S1†), consistent with that reported by Zhang et al. using an ultrasonication exfoliation method.13 This indicates that high-quality g-C3N4 NSs were obtained by the LA-assisted lithiation method. To further investigate the structural feature of the as-exfoliated g-C3N4 NSs, Raman measurement was performed (ESI, Fig. S6†). The g-C3N4 NSs exhibited almost the same Raman modes as their bulk counterpart, indicating that the exfoliated ultrathin g-C3N4 NSs retained the same crystal structure as the bulk counterpart. Notably, no clear blue shift was observed in the Raman spectra of g-C3N4 NSs,13 probably because of the identical lateral scale as the bulk g-C3N4 (ESI, Fig. S4†) in which the phonon confinement effect does not act differently. Moreover, for both the g-C3N4 bulk and NS materials, there are no shifts in the C peak, which was located at ∼1350 and 1580 cm−1, respectively, confirming the high purity of the as-exfoliated g-C3N4 NSs.
Significantly, this LA-assisted lithiation method can also be applied to exfoliate diverse 2D-layered material such as MoS2 and WS2. The AFM analyses (ESI, Fig. S7†) of the as-prepared MoS2 and WS2 NSs showed an average thickness of ∼3.5 and ∼3.0 nm, respectively, confirming that few-layer-thick MoS2 and WS2 NSs were successfully obtained. It is well known that LA is transparent and colorless in nature, while Li metal is dissolved in LA to generate metal cations, Li+ and solvated electron, e−(NH3)n, exhibiting a deep blue color arising from the presence of solvated electrons.26–34 Therefore, the entire process of Li insertion into the g-C3N4 matrix can be visualized by the color fading of the LA solution. The basic reaction corresponding to Fig. 1b can be described by eqn (1),
Li + NH3(l) → Li+ + e−(NH3)n | (1) |
It is proposed that, in addition to Li+ ion diffusion, the Li+ ions probably penetrated the C3N4 interlayers (Step 1, Fig. 7), involving the in situ redox reactions catalyzed by LA, which can be described by eqn (2).
xLi+ + C3N4(bulk) → xLi + C3N4+ | (2) |
It is rationalized that the lithiation was much faster than the traditional Li intercalation only based on the diffusion of Li+ ions.3 These Li+ located between the interlayers to form a charged g-C3N4 material, which was subsequently compensated by the solvated electrons to form a neutral g-C3N4 material with intercalated metallic Li during the shaking, as shown by eqn (3)
xLi + C3N4+ + e−(NH3)n → Li@C3N4(bulk) | (3) |
During these processes, the characteristic deep blue color of e−(NH3)n gradually faded because of the decrease in e−(NH3)n concentration, corresponding to Fig. 1c. After the insertion of metallic Li into the interlayers, the interlayer distance increased, thus weakening the van der Waals interactions between the layers (Step 2, Fig. 7). To examine the possible reaction between g-C3N4 and ammonia, the structure of bulk g-C3N4 before and after soaked in ammonia (without lithium) was compared by XRD analysis (ESI, Fig. S11†). It can be seen that no crystal structure change was found, implying bulk g-C3N4 is inert to liquid ammonia. Next, the products were exfoliated in DI water by ultrasonication (Step 3, Fig. 7). In this step, metallic Li reacts with H2O to form LiOH and H2, thus pushing the layers apart from each other. In fact, a large number of bubbles were observed during the exfoliation. Thus, isolated few-layer-thick g-C3N4 NSs were obtained. The corresponding reaction process can be described by eqn (4).
Li@C3N4 + H2O → C3N4(NS) + LiOH + H2↑ | (4) |
Notably, the as-proposed LA-assisted lithiation method is better than those reported by Zhang et al. and Kaner et al.10,26,27 owing to five outstanding merits of our study: (1) in particular, the large-scale production (∼10 g) of g-C3N4, MoS2, and WS2 NSs (for one time) has been achieved with a high yield of ∼85%. (2) Compared to the conventional methods, this method is less time-consuming. Most of the reactions were completed in <30 min; for MoS2, this process occurred in ∼5–10 min. (3) A significant feature of this method is that the degree of Li intercalation can be visually observed from the clear color changes in the LA solution from deep blue color to colorless, while the Li intercalation process can be tuned by the shaking speed of the silica tube. (4) In the absence of high-temperature treatment or oxidation process, the as-prepared NSs obtained by a low-temperature synthesis exhibited the same crystal structure and chemical stoichiometric ratio of parent (bulk) materials, exhibiting the intrinsic features of the parent (bulk) material. (5) The LA-assisted lithiation method also expands the range of layered materials that can be inserted by metallic Li than the special one.34–36 Moreover, it should be noted that the metals, Na and K, can also be used to exfoliate the 2D-layered compounds by the similar route. Thus, this route can be defined as LA-assisted alkali metal intercalation strategy.
The intriguing surface characteristics, electronic and electrical properties, and optical responses of the as-prepared g-C3N4 NSs make it promising for diverse applications. As a proof of concept, the advantage of g-C3N4 NSs as a photocatalyst was demonstrated in this study. The photocatalytic activity of the as-prepared g-C3N4 NSs was first evaluated in the photocatalytic H2 evolution from a water/triethanolamine solution. Under visible light irradiation, while a trace amount of H2 was detected using bulk g-C3N4 as the photocatalyst, the as-prepared g-C3N4 NSs showed extensively enhanced photocatalytic H2 evolution at a steady rate (Fig. 8a), indicating the stability of g-C3N4 NSs as photocatalysts. Here, the as-prepared g-C3N4 NS exhibited an average hydrogen evolution rate of ∼8 μmol h−1 within 0–5 h, which is about twice than that of bulk parent material as obtained in Wang et al.' work.15 Moreover, the g-C3N4 NSs also showed great ability in activating H2O molecules to produce highly reactive hydroxyl radicals (Fig. 8b), which can be used as reactive oxidative species to trigger various oxidation reactions for environmental remediation and organic transformations. The enhanced photocatalytic activity of g-C3N4NS can be attributed to the increased surface area (ESI, Fig. S10†), abundant dangling bonds, and modified electronic structures as demonstrated previously. The high surface/bulk ratio and more dangling bonds in g-C3N4 NSs provide abundant reactive sites. The few-layer-thick thickness and better electronic conductivity shorten the bulk diffusion length and promote the bulk transport rate of charge carriers with the consequence of reduced recombination probability. Moreover, the surface atomic geometry and the band structure engineering associated with few-layer-thick g-C3N4NSs will also contribute a lot, as has been primarily demonstrated in several photocatalysts such as ZnO and TiO2.35,36
Footnote |
† Electronic supplementary information (ESI) available: Equipment and the typical experimental process of LA-assisted lithiation. Dispersion of g-C3N4 NSs after storing for one month under ambient conditions. TEM images and EDS spectra of g-C3N4 NSs. PL spectra of ultrathin g-C3N4 NSs in solution excited at diverse wavelengths and at 340 nm with different excitation intensities. XRD patterns of bulk g-C3N4 before and after soaked in LA. XPS spectra of bulk g-C3N4, and g-C3N4 NSs. Elemental composition before and after the LA-assisted Li intercalation. See DOI: 10.1039/c4ra06036a |
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