N. C.
Raut
a,
Tom
Mathews
*a,
K.
Panda
b,
B.
Sundaravel
b,
S.
Dash
a and
A. K.
Tyagi
a
aSurface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam, T.N., India. E-mail: tom@igcar.gov.in; Fax: (+91) 4427480081; Tel: (+91) 4427480500-22206
bMaterials Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam, T.N., India
First published on 12th December 2011
Thin films of TiO2−x and TiO2−x−yN2y nano-platelets having better field emission properties compared to one dimensional nanostructures reported in literature were synthesized by spray pyrolysis. Low threshold field of 8 V μm−1 and 4.1 V μm−1, for 1 mA cm2, was observed for TiO2−x and TiO2−x−yN2y respectively, implying enhanced field emission upon N-doping.
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| Fig. 1 Raman spectra of TiO2−x and N-doped TiO2−x nanoplatelets, inset shows the corresponding XRD pattern. | ||
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| Fig. 2 FESEM images of (a) TiO2−x nanoplatelets and (b) N-doped TiO2−x nanoplatelets, depicting self standing triangular nanoplatelets, image taken near a deliberately damaged area, to visualize the shape and orientation of the nanoplatelets. | ||
The chemical states of the various species present in the films were examined with XPS. The binding energies obtained are corrected for specimen charging by referencing the observed C 1s binding energy to 284.5 eV. The Ti 2p3/2 binding energies of pure and N-doped TiO2 nanoplatelets, obtained from XPS, are 459.4 and 459.2 eV respectively, as shown in Fig. 3a. Shoulders at 457.5 eV for pure and 457.3 eV for N-doped TiO2 indicate the presence of Ti having a lower oxidation state (+3). Because of the presence of reducing species (C and H) in the precursor, titanium oxide synthesized under the present experimental conditions is likely to be oxygen deficient (TiO2−x). To maintain charge neutrality the presence of oxygen vacancies will lead to the formation of lower valent Ti cations.
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| Fig. 3 (a) Ti 2p photoelectron spectra of TiO2−x and N-doped TiO2−x nanoplatelets; (b) N 1s photoelectron spectra of N-doped TiO2−x nanoplatelets. | ||
In the case of N-doped TiO2, when two N atoms are incorporated one oxygen vacancy is created in addition to the oxygen vacancies created because of the presence of reducing species in the precursor. The small red shift in the Ti 2p binding energies of N-doped TiO2 with respect to TiO2−x can be attributed to the increase in electron cloud density on Ti because of the presence of nitrogen in the anion sub-lattice, which has lower electronegativity compared to oxygen. The N 1s spectrum of N-doped TiO2 was recorded from the surface and after sputtering for 30, 60 and 90 s. Since not much change in peak intensity was observed between the spectra recorded after 60 and 90 s of sputtering, the one after sputtering for 90 s is taken and is given in Fig. 3b. The peak position (396.9 eV) corresponds to β-N, which is directly bonded to the central Ti cation.15 The formula of N-doped TiO2 can therefore be written as TiO2−x−yN2y. The nitrogen content estimated from the peak area and sensitivity factor using the equation:
| XN = (IN/SN)/[(ITi2p/STi) + (IO/SO) + (IN/SN)] |
Field emission measurements were carried out in a home built tunable parallel plate capacitor setup, in a high vacuum chamber at 10−7 m bar. A molybdenum rod of 3 mm diameter with a mirror polished flat surface was used as the anode. The separation between the flat surface and the film was measured using a digital micrometer and optical microscope. The variation of FE current density with electric field for TiO2−x and TiO2−x−yN2y films is shown in Fig. 4. The turn on field, defined as the extraction field at 1 mA cm−2, is estimated to be 8.0 V μm−1 for TiO2−x and 4.1 V μm−1 for TiO2−x−yN2y nanoplatelets. The threshold field corresponding to an emission current density of 10 mA cm−2 is 10 and 6 V μm−1 for TiO2−x and TiO2−x−yN2y respectively. These clearly depict the enhancement of FE properties, of TiO2−x, on N-doping.
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| Fig. 4 Field emission characteristics of pure TiO2−x and N-doped TiO2−x nanoplatelets. Inset shows the F–N plot of pure TiO2−x and N-doped TiO2−x nanoplatelets. | ||
The FE properties can be analyzed by the Fowler–Nordheim model16 given by the equation:
| ln(J/E2) = ln(Aβ2/Φ) + (−BΦ3/2/β)(1/E) |
997, and −180 ± 26 corresponding to β = 356, respectively. For TiO2−x−yN2y the high and low field slopes are −5.68 ± 0.36 corresponding to β = 11
563, and −60.87 ± 8.23 corresponding to β = 1071, respectively. From this we can infer that TiO2−x−yN2y has large β values compared to TiO2−x. A comparison of the threshold fields at 1 mA cm−2 obtained in the present study with those reported in the literature is tabulated in Table 1. The extraction field of 4.1 V μm−1 is much lower compared to reported values. It is interesting to note that the FE performance of aligned TiO2−x triangular nanoplatelets synthesized by the pyrolysis technique is superior to vertically aligned wires7,8 and nanotubes10–13 though the one-dimensional architectures are more favorable for FE. Hence, the properties determined by electronic structure modification may be responsible for the enhanced FE.
| Emitters | Morphology | Synthesis method | Extraction field/V μm−1 |
|---|---|---|---|
| TiO2−x anatase | Nanoplatelets (present study) | Spray pyrolysis | 8.0 |
| N-doped TiO2−x anatase | Nanoplatelets (present study) | Spray pyrolysis | 4.1 |
| TiO2 | Nanowires 9 | RF sputtering | ∼6.15 |
| TiO2 | Nanowires 7 | High temp. oxidation | ∼11.5 |
| TiO2 | Nanowires 8 | PVD | ∼23.0 |
| TiO2 | Nanotubes 11 | Anodization | ∼17.0 |
| Fe-doped TiO2 | Nanotubes 13 | Hydrothermal | ∼14.5 |
| N-doped TiO2 | Nanotubes 12 | Anodization | ∼12.8 |
It is well known that in TiO2−x, oxygen vacancies form localized donor states 0.75–1.18 eV below the conduction band minimum (CBM).19,20 In the present study the existence of oxygen vacancies and related Ti3+ in TiO2−x was confirmed by XPS. In the case of TiO2−x−yN2y, compared to TiO2−x, there are additional oxygen vacancies due to N-doping. This increases the band width of the localized donor states, and the energy gap between the localized donor states and CBM reduces to values below 0.75 eV (0.75 − Δ). It has been shown from experimental results and first-principle calculations that substitution of oxygen by nitrogen atoms in TiO2 creates isolated localized N 2p state above the O 2p dominant valence band.21,22 From photoelectrochemical studies it has been shown that the localized N 2p state is located at ∼0.75 eV above the valence band maximum (VBM).23 The presence of localized donor states located at (0.75 − Δ) eV below the CBM and acceptor state at ∼0.75 eV above the VBM will shift the Fermi level to higher energies compared to TiO2−x. Since electron emission from a material into a vacuum under the influence of an electric field takes place by the tunneling of electrons lying below the Fermi level through the potential barrier24 the rise in the position of the Fermi level will improve the FE properties as well as lower the work function.
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