Banani
Kalita
,
Prodeep
Phukan
and
Anup K.
Talukdar
*
Department of Chemistry, Gauhati University, Guwahati-781014, Assam, India. E-mail: anup_t@sify.com; Tel: +91 (0)9864073504
First published on 13th June 2012
Aluminosilicates with well-ordered MCM-48 mesostructures were synthesized by one step and two step methods. Single step method was found to be appropriate for metal incorporation. This method was applied to synthesize transition and inner transition metal incorporated MCM-48. These modified MCM-48 materials were characterized by a variety of techniques including XRD, FTIR, DRS-UV-Vis, TGA, N2 adsorption and SEM. Post-synthesis modification of the SiMCM-48 material was also done by impregnating 1%, 3% and 5% vanadium without compromising the integrity of the cubic mesostructure. The transition and inner transition metal incorporated MCM-48 materials were tested for oxidation reaction and were found to exhibit far better activities in anisole oxidation than SiMCM-48. Among the metal introduced MCM-48, vanadium–MCM-48 samples showed highest activities.
Defect-free mesoporous siliceous molecular sieves with an SiO2 framework are electrically neutral, leading to a lack of strong surface acidity. The M41S materials have high potential for becoming promising catalysts for size and shape selective acid-catalyzed reactions in the petrochemical and fine chemical industries,7 provided the materials are modified to generate oxidation and acid functionality in their structure. Although among the members of the M41S family cubic MCM-48 is preferred over the hexagonal MCM-41 in catalytic applications because of the three-dimensional pore arrangements of the former, one of the reasons for the limited reports on the modification of MCM-48 may be due to the difficulty of its synthesis. There has been a regular approach on improvement in structural and hydrothermal stability of mesostructured MCM-48 materials in the last few years.8–13 In contrast, very few reports are available about the modification of the material for introduction of acid and oxidation functionality.11,12,14–17 Although introducing transition metals into the framework of cubic MCM-48 materials seemed appealing, the attempts so far have been unsystematic in nature. Kao et al.14 reported the preparation of cubic mesoporous aluminosilicate MCM-48 via the assembly of the preformed zeolite precursor and the Gemini surfactant. It required several steps and in total 56 h time duration until final crystallization. The reproducible method, claimed by Campelo et al.,15 used hydroxyl-exchanged cetyl-trimethylammonium bromide (CTAB) to synthesize Al-MCM-48 and NH4F solution (post-synthesis treatment) to improve the quality and acidity of the material is a two step procedure. Other procedures have also been found to be either two step and too lengthy11,17 or post-synthesis grafting.12 Moreover, the procedures were not systematically tested for incorporation of other metals. To modify the composition of the inorganic walls of MCM-48 mesoporous materials, several attempts were made to homogeneous incorporation of transition metal atoms as well as main group elements (Fe, Ti, V, Al, B, Ga etc.) into the framework structure. Metals such as Ti,18–20 Mn,21–24 Cr20,21,25–27 and V20,21,26,28,29 have been reported to have been introduced into M41S mesoporous silica using different synthetic procedures like direct hydrothermal method, wet impregnation, grafting, template ion exchange method etc. Substituting silicon by trivalent cations such as B3+, Ga3+, Al3+ and Fe3+ in the mesoporous silica wall30,31 results a negative framework charge, which can be compensated by protons providing catalytically active acid sites.
In the present work, the synthesis of cubic mesoporous aluminosilicate MCM-48 has been systematically approached through one step and two step procedures and once successful through one step procedure, the same has been applied for incorporation of transition and inner transition metals to MCM-48. The one step procedure is very simple and successful for introduction of acid and oxidation functionality to the material. The catalytic activity of the MCM-48 materials modified by incorporating the transition metals vanadium and zirconium and inner transition metal cerium in anisole oxidation has also been investigated.
The prepared gel was added slowly with constant stirring to the surfactant solution. Finally, the whole mixture was stirred at pH 9.6 for another 2 h to get a homogeneous gel. The mixture was transferred to an autoclave and heated at 373 K for 3 h and then at 423 K for another 3 h inside an oven. After complete crystallization, the autoclave was quenched and the resultant solid product was separated from mother liquor by centrifugation. The product was first washed with warm water and then repeatedly washed with de-ionized water. The resulting solid product was dried at room temperature overnight and at 383 K for 6 h. For the purpose of removing the surfactant, the sample was calcined in a programmable furnace at 813 K for 6 h with a heating rate of 3 K min−1.
The molar gel composition of the synthesis system was SiO2:
Na2O
:
CTAB
:
EtOH
:
H2O = 1
:
0.21
:
0.30
:
4
:
100
After 2 h stirring, the mixture was autoclaved at 373 K for 2 h. The autoclave was quenched and the resultant solid product was separated from mother liquor by centrifugation. Both the products were first washed with warm water and then repeatedly with de-ionized water. The resulting solid products were dried at room temperature overnight and at 383 K for 6 h. For the purpose of removing the surfactant, the samples were calcined in a programmable furnace at 813 K for 6 h with a heating rate of 3 K min−1.
The molar gel composition was TEOS:
NH3
:
EtOH
:
CTAB
:
H2O = 1
:
13
:
56
:
0.4
:
405
The molar gel composition was TEOS:
NH3
:
EtOH
:
CTAB
:
H2O = 1
:
13
:
56
:
0.4
:
405 and Si/Al molar ratio was 100.
After successful synthesis of AlMCM-48 by the single step method, two samples each of cerium and vanadium doped with Si/metal molar ratios of 100 and 40 and one sample of zirconium incorporated MCM-48 material with Si/Zr molar ratio of 40 was synthesized by this method. The sources of metals were ammonium ceric nitrate, vanadium acetyl acetonate and zirconium nitrate for Ce, V and Zr, respectively. The designation, method details and molar gel composition of in situ and post-synthesis modified MCM-48 samples are given in Table 1.
Sample | Details | Molar gel composition |
---|---|---|
SiMCM-48 (two step) | SiMCM-48 synthesized by two step method | SiO2![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
SiMCM-48 | MCM-48 in pure silicon system synthesized by single step method | SiO2![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
AlMCM-48 | Al doped MCM-48 with Si/Al molar ratio 100 | TEOS![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
CeMCM-8(Si/Ce 100) | Ce doped MCM-48 with Si/Ce molar ratio 100 | TEOS![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
CeMCM-48(Si/Ce 40) | Ce doped MCM-48 with Si/Ce molar ratio 40 | TEOS![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
VMCM-48(Si/V 100) | V doped MCM-48 with Si/V molar ratio 100 | TEOS![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
VMCM-48 (Si/V 40) | V doped MCM-48 with Si/V molar ratio 40 | TEOS![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
ZrMCM-48(Si/Zr 40) | Zr doped MCM-48 with Si/Zr molar ratio 40 | TEOS![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
1%VimpSiMCM-48 | SiMCM-48 with 1% vanadium oxide loading by impregnation method | SiO2![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
3%VimpSiMCM-48 | SiMCM-48 with 3% vanadium oxide loading by impregnation method | SiO2![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
5%VimpSiMCM-48 | SiMCM-48 with 5% vanadium oxide loading by impregnation method | SiO2![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
Sample | d spacing (Å) | d(220)/d(211) | a o (Å) |
---|---|---|---|
SiMCM-48 | 32.35 | 0.866 | 79.22 |
AlMCM-48 | 33.04 | 0.857 | 80.93 |
CeMCM-48(Si/Ce 100) | 34.19 | 0.866 | 83.83 |
CeMCM-48(Si/Ce 40) | 36.47 | 0.862 | 89.32 |
VMCM-48(Si/V 100) | 33.34 | 0.861 | 81.65 |
VMCM-48(Si/V 40) | 34.44 | 0.854 | 84.34 |
ZrMCM-48(Si/Zr 40) | 35.33 | 0.825 | 86.52 |
The cubic unit cell parameter ao is calculated by the formula ao = d(h2 + k2 + l2)1/2 (d = interplanar spacing) as calculated by Bragg's law. The d spacings corresponding to (2 1 1) reflection and the values of cubic unit cell constant (ao) of the samples [SiMCM-48, CeMCM-48(Si/Ce 40), CeMCM-48(Si/Ce 100), VMCM-48(Si/V 40), VMCM-48(Si/V 100), ZrMCM-48(Si/Zr 40)] are given in Table 2. The XRD patterns of Al incorporated MCM-48 samples synthesized by both two step and one step methods are shown in Fig. 1. The structural quality of the aluminosilicate MCM-48 samples as evaluated by powder XRD was found to be excellent, showing integrity of the cubic mesostructure when single step was employed for synthesis. The samples herein exhibited a more intense (2 2 0) diffraction peak than those obtained by Kao et al.,14 Li et al.34 and Shih et al.35 who have reported preparation of stable cubic mesostructure from zeolite and claimed to obtain better results than Al–MCM-48 samples prepared by direct Al incorporation. Although, in the last case at high Si/Al ratios the materials exhibited excellent XRD ordering but the (2 2 0) diffraction peak was absent for the samples with lower Si/Al ratio. The unit cell parameter (ao) is found to slightly increase in AlMCM-48 as compared to SiMCM-48 (Table 2). The expansion in the unit cell with incorporation of aluminum is caused by the Al–O bond being longer (1.75 Å) than the Si–O bond (1.60 Å).
![]() | ||
Fig. 1 XRD pattern of (a) AlMCM-48 (two step), (b) AlMCM-48 (one step). |
The powder XRD patterns of Ce incorporated MCM-48 samples with Si/Ce molar ratio 100 and 40 have shown four main Bragg peaks corresponding to hkl = (2 1 1), (2 2 0), (4 2 0), (3 3 2) which are the characteristic peaks of cubic MCM-48 phase (Fig. B in the ESI†). The XRD results of CeMCM-48(Si/Ce 100) and CeMCM-48(Si/Ce 40) have shown that the d values and cubic unit cell parameters (ao) gradually increase with an increase of Ce content in the framework structure (Table 2). These results are in accordance with the earlier reports for the heteroatom substituted silicate framework.36–38 As the radii of Ce4+ cation (87 pm, 6-coordinate) is larger than that of Si4+ (26 pm, 4-coordinate; 40 pm, 6-coordinate), unit cell parameters are expected to increase when Ce cations are incorporated into the framework structure of MCM-48 materials. Furthermore, in case of Ce incorporated MCM-48 samples, the main diffraction peaks corresponding to (2 1 1) and (2 2 0) reflections shifted to lower 2θ value as compared to SiMCM-48 sample.
The XRD pattern of vanadium incorporated MCM-48 samples with Si/V molar ratio 100 and 40 consist of characteristic Bragg peaks which verify the presence of cubic phase (Ia3d) (Fig. C in the ESI†). The crystallographic XRD data analysis of V incorporated MCM-48 samples show similar changes in the d values and the unit cell parameters with the increase of V content as explained above in case of Ce incorporated MCM-48 samples. The radii of V4+ cation (59 pm) is also larger than that of Si4+ (40 pm). In case of V incorporated MCM-48 samples, the main diffraction peaks corresponding to (2 1 1) and (2 2 0) reflections are also shifted to lower 2θ value as compared to the SiMCM-48 sample. A similar trend in the XRD results is observed in case of Zr doped MCM-48 samples. The XRD pattern of Zr doped MCM-48 sample with Si/Zr molar ratio 40 is shown in Fig. D of the ESI.† A significant change in the values of unit cell constant is also observed for Ce, V and Zr doped MCM-48 samples. The unit cell parameter increases in the order VMCM-48(Si/V 40) < ZrMCM-48(Si/Zr 40) < CeMCM-48(Si/Ce 40). This may be because of the fact that the values of cationic radii also increase in the order V4+ (59 pm) < Zr4+ (72 pm) < Ce4+ (87 pm). Consequently, the crystallographic data analysis from XRD results confirms that Ce, V and Zr atoms have been successfully incorporated into the framework structure of MCM-48 materials by the single step method.
All IR spectra exhibit one common feature, i.e. a band at ∼960 cm−1. Some authors have considered this as a proof for the incorporation of the heteroatom into the framework.42,43 In our studies, the intensity of this band marginally increases with increase in the amount of metal ions. Camblor et al.42 have proposed that the band at 960 cm−1 is due to the Si–O stretching vibrations of Si–OH groups present at defect sites. This vibration has also been detected in Ti and V containing silica molecular sieves.44
The FT-IR spectra of vanadium oxide loaded MCM-48 samples (1%VimpSiMCM-48, 3%VimpSiMCM-48, 5%VimpSiMCM-48) are shown in Fig. F in the ESI.†
![]() | ||
Fig. 2 TGA/DTG plot of MCM-48 samples. |
Samples | Mass percentage loss | ||||
---|---|---|---|---|---|
313–413 K | 413–533 K | 533–653 K | 653–1023 K | Total | |
SiMCM-48 (two steps) | 3.2 | 37.2 | 14.1 | 8.3 | 62.8 |
SiMCM-48 | 6.0 | 29.2 | 16.5 | 5.2 | 56.9 |
AlMCM-48 | 2.1 | 5.0 (413–483 K) | 10.5 (483–603 K) | 6.0 | 25.4 |
1.8 (603–653 K) | |||||
CeMCM-48 (Si/Ce 100) | 3.2 | 28.2 | 5.0 (533–603 K) | 10.8 (603–1023 K) | 47.2 |
CeMCM-48 (Si/Ce 40) | 3.2 | 27.2 | 11.3 | 7.3 | 49.0 |
VMCM-48 (Si/V 100) | 4.2 | 26.1 | 16.2 | 8.2 | 54.7 |
VMCM-48 (Si/V 40) | 5.5 | 28.1 | 16.2 | 3.4 (753–1023 K) | 56.9 |
3.7 (653–753 K) | |||||
ZrMCM-48 (Si/Zr 40) | 4.2 | 30.4 | 16.1 | 8.1 (773–1023 K) | 64.8 |
6.0 (653–773 K) |
The initial small weight loss in the range of 313–413 K is due to desorption of physically adsorbed water. The removal of organic surfactants is completed in two steps. This occurs in SiMCM-48 (both samples), CeMCM-48(Si/Ce 40) and VMCM-48(Si/V 100) in the ranges 413–533 K and 533–653 K and in CeMCM-48(Si/Ce 100) in the ranges 413–533 K and 533–603 K. However, this process completes in three steps for samples AlMCM-48, VMCM-48(Si/V 40) and ZrMCM-48(Si/Zr 40) e.g. in the temperature ranges of 413–483 K, 483–603 K and 603–653 K for AlMCM-48, and 413–533 K, 533–653 and 6533–753 K for VMCM-48(Si/V 40) and ZrMCM-48(Si/Zr 40).
The low-temperature weight loss in SiMCM-48 (both samples), CeMCM-48(Si/Ce 40), VMCM-48(Si/V 100) and CeMCM-48(Si/Ce 100) is assigned to the decomposition of CTAB surfactant occluded inside the channels. In addition to this low-temperature weight loss, the high-temperature weight loss observed in TGA of AlMCM-48 is assigned to the decomposition of protonated amines balancing the framework negative charge resulting from the incorporation the trivalent metal into MCM-48. From the TGA analysis, it is also observed that with an increase in level of metal content in the MCM-48 structure, the total weight loss also increases for the samples CeMCM-48(Si/Ce 40) and VMCM-48(Si/V 40).
The UV-Vis DRS spectrum of the VMCM-48(Si/V 40) sample shows two bands in the region 250–390 nm (Fig. 4). According to Sen et al. the first band in the region 250–300 nm is characteristic of V4+ charge transfer band of VO2+ species and the band in the region 330–390 nm is due to charge transfer resulting from V5+ in Td environment.45
![]() | ||
Fig. 5 Nitrogen adsorption–desorption isotherms of (a) SiMCM-48, (b) CeMCM-48(Si/Ce 40), (c) VMCM-48(Si/V 40), (d) ZrMCM-48(Si/Zr 40). |
Pore size distribution (PSD) was obtained from the adsorption data by means of the BJH formula.47 The mesopore diameter (DBJH), cumulative pore volume (VBJH), and Brunauer–Emmett–Teller (BET) surface area (ABET) are listed in Table 4. The cumulative BJH desorption pore volumes are found in the range of 0.21–0.73 cm3 g−1. The BJH adsorption average pore diameters (Table 4) for the physisorption of N2 on MCM-48 samples are found to be 2.4, 2.7, 3.0 and 2.5 nm for SiMCM-48, CeMCM-48(Si/Ce 40), VMCM-48(Si/V 40), and ZrMCM-48(Si/Zr 40), respectively. The BET surface area of metal incorporated MCM-48 increases with ZrMCM-48 (Si/Zr 40) having highest value (1133.96 m2 g−1). The surface area values increase in the order of SiMCM-48 < VMCM-48 (Si/V 40) < CeMCM-48 (Si/Ce 40) < ZrMCM-48 (Si/Zr 40).
Physical properties | Sample name | |||
---|---|---|---|---|
SiMCM-48 | CeMCM-48 (Si/Ce 40) | VMCM-48 (Si/V 40) | ZrMCM-48 (Si/Zr 40) | |
BET surface area (m2 g−1) | 683.81 | 1105.31 | 715.21 | 1133.96 |
BJH adsorption average pore diameter (nm) | 2.4 | 2.7 | 3.0 | 2.5 |
BJH desorption cumulative pore volume (cm3 g−1) | 0.21 | 0.73 | 0.31 | 0.37 |
![]() | ||
Fig. 6 Scanning-electron micrographs of (a) SiMCM-48, (b) CeMCM-48(Si/Ce 40) (c) VMCM-48(Si/V 40), (d) ZrMCM-48(Si/Zr 40). |
![]() | ||
Fig. 7 Effect of reaction time on conversion and selectivity in the anisole oxidation reaction using VMCM-48(Si/V 40); anisole![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
![]() | ||
Fig. 8 Comparison of (a) metal incorporated MCM-48 materials on anisole oxidation reaction; (b) V incorporated and V-impregnated MCM-48 materials on anisole oxidation reaction; anisole![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
Comparison of percentage of conversion and product distribution in anisole oxidation for different metals incorporated MCM-48 with same Si/M molar ratio of 40 under the similar reaction conditions reveals that vanadium incorporated MCM-48 shows highest conversion (15.7%) among the three catalysts (Fig. 8(a)). This is probably due to the fact that V can act as a better electron pair acceptor and able to expand its coordination number easily. The order of activity is found to be VMCM-48 >ZrMCM-48 > CeMCM-48. The product distribution is more or less same over VMCM-48 and ZrMCM-48, with CeMCM-48 showing slight preference for formation of the para-isomer.
Comparison of percentage of conversion and product distribution in anisole oxidation for different percentage of vanadium impregnated SiMCM-48 materials (vanadium as 1%, 3% and 5% vanadium oxide) are given in Fig. 8(b). Reactions were carried out under the same experimental conditions as reported above. Both the activity and selectivity for vanadium impregnated MCM-48 samples increase with increase of vanadium oxide impregnation amount. Vanadium oxide impregnated samples gave almost equal selectivity towards ortho and para products when impregnation was 1 and 3%. However, at higher loading of vanadium (5%) the ortho to para ratio increased up to 1:
3. Comparing the results of V-impregnated MCM-48 materials, it is observed that conversion increases with increase of vanadium oxide loading. From this result it may be inferred that there is a critical concentration of V4+ species in the channels of MCM-48 above which the formation and diffusion of ortho-product are prevented due to steric factors. The higher activity of V impregnated MCM-48 with 5% vanadium oxide for oxidation of anisole than the corresponding V incorporated-MCM-48 samples may be attributed to the presence of highly dispersed vanadium oxides inside the channels. Under these conditions, oxidation of anisole gave preferentially the para-isomer.
Vanadium complexes and oxides due to their high reactivity and remarkable stability have emerged as efficient catalysts for a variety of oxidation reactions using hydrogen peroxide as oxidant,48–51 but there are few literature reports on the hydroxylation of aromatics.52–54 A comparison of the catalytic efficiency of various heterogeneous vanadium-based catalysts55,56 in anisole hydroxylation is presented in Table 5. Under almost similar reaction conditions our catalysts are found to be more efficient (entry 3 and 4, Table 5) for conversion in hydroxylation of anisole with hydrogen peroxide.
Entry | Ref. | Catalyst | Conditions | Conv. (mol%) | Selectivity of products (%) | ||
---|---|---|---|---|---|---|---|
PHA | OHA | Others | |||||
T = temperature, R = ratio of substrate to H2O2, t = time of reaction. | |||||||
1 | 51 | TS-1(Si/Ti = 100) | T = 353 K, R = 2, t = 3 h | 1.4 | 58 | 42 | — |
2 | 52 | Vanadyltetraphenoxyphthalocyanine | T = 298 K, R = 5, t = 8 h | 11.0 | 48 | — | 52 |
T = 353 K, R = 5, t = 8 h | 22.0 | 39 | — | 61 | |||
3 | This work | VMCM-48(S/V = 40) | T = 323 K, R = 5, t = 8 h | 27.7 | 66 | 34 | — |
4 | This work | 5% VimpMCM-48 | T = 323 K, R = 5, t = 8 h | 35.5 | 68 | 32 | — |
It is believed that the new bridges of M–O–Si were formed (M = V, Zr, Ce) in the in situ metal incorporated MCM-48 structure as shown in Scheme 1(a),57 while isolated monomeric tetrahedral vanadium species may be present on the vanadium impregnated MCM-48 surface (Scheme 1(b)). We envisioned that the M–O–Si bonds in incorporated MMCM-48 structure and V species in the impregnated VMCM-48 may be the active centre for the hydroxylation of aniosole.58
![]() | ||
Scheme 1 (a) Formation of M–O–Si in the structure (for Zr and Ce, M = O will be M–O), (b) isolated monomeric tetrahedral vanadium species on the vanadium impregnated MCM-48 surface. |
Based on the study of Nizova et.al.59 oxidation by H2O2 in acetonitrile for vanadium we can propose the following mechanism for the formation of o-hydroxyanisole (OHAP) and p-hydroxyanisole (PHAP):
V5+ + H2O2 ⇌ Complex |
Complex → V4+ + H+ + HO2˙ |
V5+ + HO2˙ → V4+ + H+ + O2˙ |
V4+ + H2O2 → V5+ + HO− + HO˙ |
2 Anisole + 2HO˙ → PHAP + OHAP + H |
2 |
O |
The excess formation of para isomers in hydroxylation of anisole over MMCM-48 (M = Zr, Ce, V) requires the assumption of some effects favouring formation of these isomer molecules. It might be explained by the different adsorption ability of the para and ortho products on the catalysts or by the different rate of polymerization of both products.60 In the present case the stronger adsorption of the ortho molecule from the hydroxyl and methoxy groups, ortho to each other, enabling a two fold attachment to an active centre, leading to lower diffusion, may be the cause lower selectivity to o-isomer (Scheme 2). Obviously, the kinetics is influenced by the rate law comprising a term which considers the different strengths of adsorption of both products.
![]() | ||
Scheme 2 Two fold adsorption of OHA. |
![]() | ||
Fig. 9 Effect of (a) H2O2 using VMCM-48(Si/V 40); (b) catalyst concentration VMCM-48(Si/V 40). |
![]() | ||
Fig. 10 Effect of temperature on conversion and selectivity in the anisole oxidation reaction using VMCM-48(Si/V 40); anisole![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
Transition and inner transition metal incorporated MCM-48 samples were found to be much more active for oxidation of anisole than SiMCM-48. Among all the metal incorporated samples VMCM-48 was the better catalyst for oxidation of anisole by H2O2.
Footnote |
† Electronic supplementary information (ESI) available. See DOI: 10.1039/c2cy20198d |
This journal is © The Royal Society of Chemistry 2012 |