Zixue
Su
and
Wuzong
Zhou
*
EaStChem, School of Chemistry, University of St. Andrews, St. Andrews, Fife, KY16 9ST, United Kingdom. E-mail: wzhou@st-andrews.ac.uk; Fax: +44 (0)1334463808; Tel: +44 (0)1334
467276
First published on 16th March 2009
Formation of highly ordered TiO2 nanotubular arrays during anodization of titanium can be elucidated by using the equifield strength model and a double-layer structure. The two characteristic microstructural features of anodic titanium oxide (ATO) in comparison with anodic aluminium oxide (AAO), a thin titanium hydroxide layer and an O-ring like surface pattern, were investigated using scanning electron microscopy and high resolution transmission electron microscopy (HRTEM). Field-enhanced dissociation of water is extremely important in the formation of the nanotubes with a double-layer wall and an O-ring-like pattern, and in the determination of porosity. The relations between porosity of the ATO films and the anodization conditions, such as current density and electric field strength, have been established. Crystallization of the anodic TiO2 nanotubular arrays was also achieved and the microstructures were studied by using HRTEM.
The most significant difference between ATO and AAO is that the former contains separated nanotubes and the latter is a continuous film with a pore array (Fig. 1). The mechanism of this difference has not been well established. The microstructures of ATO are obviously more complicated than those in AAO. Even for AAO, the formation mechanism is still not fully understood. A widely accepted model for the hexagonally ordering in AAO is based on mechanical stress associated with volume expansion during the oxidation of aluminium.14 However, it is difficult to use this model to elucidate the self-ordering process in ATO since the nanotubes are separated by at least a few nanometers. Recently, we proposed an equifield strength model for explaining the formation of parallel pores and geometry of the pores in AAO.15 We believe this model can also be used in ATO and other porous metal oxides. We also found that the relative dissociation rate of water during anodization is a very important factor in governing the porosity of the anodic oxide films.
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Fig. 1 Typical top-view SEM images of (a) AAO and (b) ATO films. |
In the present work, the equifield strength model was used to elucidate the formation of the pores in ATO, the self-ordering and the geometry (e.g. hemispherical pore bottom) of the pores. Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) were applied to reveal the microstructures of ATO nanotubes, including a double-layer wall and the periodically appearing O-ring-like pattern on the outer surface of the nanotubes, therefore understanding the reason of the separation of the nanotubes. In addition, the porosity of ATO films was found to be governed by the relative dissociation rate of water which is dependent on anodization conditions, such as electrolyte, applied voltage, current density and electric field strength. With these achievements, the fabrication of ATO films can now be controlled more precisely. Finally, crystallization of the ATO films has been achieved, widening the potential application of the materials.
Observation of the morphology of the produced ATO films was carried out using SEM on a JEOL JSM-5600 microscope. TEM and high resolution TEM (HRTEM) characterizations of individual TiO2nanotubes were performed on JEOL JEM-2011 electron microscope operated at 200 kV, equipped with an Oxford Link ISIS energy dispersive X-ray spectroscopy (EDX) system and a Gatan 794 camera. Images were recorded at magnifications of 30000 to 600
000×. Crystallization of the ATO films, by annealing from 285 °C to 600 °C in air, was monitored by X-ray powder diffraction (XRD) method on a Philips-1 diffractometer. Infrared spectra in a range of 400–4000 cm−1 were collected on a Perkin Elmer Spectrum GX IR spectrometer.
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Fig. 2 SEM images of the produced ATO films with (a) a profile view at a low magnification showing the film thickness, (b) a profile view at a larger magnification showing O-ring pattern as indicated by the arrow, (c) a top view of a film with nanotubes being partially removed. (d) Schematic drawing of the microstructure of ATO. |
Unlike AAO where the wall of the pores is monophasic aluminium oxide, the nanotubes in ATO have a double-layer wall as revealed by TEM images. Fig. 3a is a TEM image of two parallel nanotubes of 130 nm in diameter, 30 nm thickness of the inner layer, 8 nm thickness of the outer layer and about a 3 nm the space between the nanotubes. After electron beam irradiation for a few minutes, the outer layer was separated from the inner layer due to the different thermal expansion coefficients (Fig. 3b), confirming that these two layers have different compositions and an obvious boundary. Infrared spectrum of the as-prepared ATO shows a peak at ∼1630 cm−1 and a broad band between 3000 cm−1 and 3700 cm−1, both corresponding to structural OH−.15,16 The intensities of these peaks drop when the sample was heated at a high temperature. Bearing in mind that Taveira, et al. identified the existence of Ti(OH)4 by XPS in the compact layer formed at the early stage of anodization of titanium,17 the infrared information together with the volume shrinkage behavior indicate that the outer layer is more likely to be some type of titanium hydroxide with a relatively lower density, while the inner layer is titanium oxide.
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Fig. 3 (a) TEM image of two nanotubes dropped from an ATO film, showing a double-layer wall. The arrows indicate the outer layers. After electron beam irradiation for a few minutes, the inner layer and outer layer are separated (b). |
When titanium is anodized, a barrier layer of titanium oxide forms on the metal surface. The initiation of pore formation should be the same as that in AAO, which is due to defects and a rough surface in the barrier layer.15 We now consider chemical reactions when a pore is developed from a surface pit. At the electrolyte/oxide interface, titanium oxide is dissolved in the fluoride-anion-containing electrolyte. This process will reduce the thickness of the oxide layer. Suppose all the oxide anions created from this dissolution migrate from the electrolyte/oxide interface to the oxide/Ti interface to form Ti oxide or Ti hydroxide, the amount of oxide anions is just enough to form a new layer at the pore bottom and the thickness of the oxide layer in the hemispherical bottom is maintained. On the other hand, a large amount of oxide anions are still needed to build the wall of the pores with a volume corresponding to ΔL during anodization time Δt (Fig. 4a). These oxide anions are from dissociation of water on the oxide surface. Consequently, the overall reaction at the electrolyte/oxide interface can be written as
TiO2 + nH2O + 6F− → [TiF6]2− + (n + 2 − x) O2− + xOH− + (2n − x)H+ | (1) |
2Ti + 2O2− + 4OH− → TiO2 + Ti(OH)4 + 8e− | (2) |
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Fig. 4 Schematic drawing of nanotube formation in ATO. (a) Two neighbouring nanotubes with Ti metal in between would move closer to each other by expanding their diameter. (b) The expansion stops when they touch each other. (c) The hydroxide layer in between two nanotubes shrinks along the side surfaces when it decomposes. (d) The corresponding TEM image of such twin nanotubes. |
Reaction (2) leads to an increase of the thickness of the oxide layer. When titanium is oxidized into Ti4+ cations, part of them stays in the oxide/hydroxide layer and other part moves directly from the hydroxide/metal interface towards the electrolyte without forming oxide or hydroxide.
Since the whole electrolyte/oxide interface has a uniform potential, so does the hydroxide/metal interface, the field direction is always perpendicular to the interfaces. Hemispherical morphology of the bottoms of the ATO nanotubes is the only shape which can meet the above mentioned equifield strength requirement. On the other hand, it was previously reported that the hemispherical pore bottom cannot be achieved when a very strong Cl−-containing acidic solution is used in anodization of titanium, when chemical etch dominates the process and no stable oxide layer forms.21 In this case, the equifield strength model cannot be applied and a square shape or other non-spherical shape could appear. The HF-based electrolyte is also too strong an acid for anodization of titanium and chemical etching is so significant that the nanotubes formed at earlier stage would be dissolved during the process and it is difficult to increase the thickness of the nanotubular arrays.6 This is the reason why HF-based electrolytes have been recently replaced by NH4F-based electrolytes22 or a non-aqueous organic electrolyte.18
Another important characteristic of the equifield strength model is that a single nanotube can not only grow at the bottom (downwards) but also expand its pore diameter as indicated by the arrows in Fig. 4a. Only when two nanotubes touch each other, as shown in Fig. 4b, does the expansion stop. The hydroxide layer can shrink along the directions perpendicular to the side surfaces of the nanotubes, forming separated nanotubes with double layer walls (Fig. 4c). In this case, the bottoms of the nanotubes are still connected each other. The experimental observation for this microstructure is shown in Fig. 4(d).
Since the thickness of the wall is determined by the anodization conditions, mainly the field strength, and the porosity of the ATO film is governed by the relative dissociation rate of water, as we discuss later, the diameter of the nanotubes tends to be constant. The movement of the nanotube walls towards each other, driven by the self-enlargement potential, eventually results in a shift of the nanotubes. This is the principal driving force of the self-organization of the nanotubes in ATO to form a honeycomb pattern.
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Fig. 5 TEM images of (a) a cluster of ATO nanotubes and (b) a single nanotube, showing an O-ring pattern on the outer surface of the nanotubes. (c) and (d) Schematic drawings of the O-ring formation in ATO films. Arrows in (c) indicate the directions of volume contraction of the hydroxide layer. |
Since the hydroxide layer is revealed, the formation mechanism of these O-rings can be understood by considering the directions of volume contraction. Due to the electric field and local-heating-enhanced dehydration, the ATO nanotubes could separate from each other as elucidated in Fig. 4, where the directions of volume contraction of the hydroxide layer are normal to the walls. However, the direction of the field-induced contraction can also be parallel to the growth direction of the nanotubes (field direction), leaving some small bridges of more condensed oxide in between nanotubes. As shown in Fig. 5(c), the electric field at the pore base between two neighbouring tubes could be divided into the parallel and normal directions, leading to a volume contraction along and perpendicular to the wall. It is expected that the intervals of the O-rings (bridges), like the thickness of the barrier layer, is also a function of the applied voltage. For example, an increase of the intervals of the O-rings was observed, from ∼36.2 nm at 25 V to ∼62.0 nm at 60 V as measured from the TEM images, and the corresponding barrier thickness were ∼40.0 nm and 70.2 nm, respectively.
No = (SC − SP) × ΔL × Do | (3) |
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Fig. 6 Schematic drawings of a single pore growth for a length increase of ΔL (a) and the compact pore array on top view (b). (c) Porosity of ATO (P) as a function of the relative rate of water dissociation (n) at the oxide/electrolyte interface. |
On the other hand, the total moles of dissolution of TiO2 in the oxide/electrolyte interface following the eqn (1) is (1/n)No. The total moles of titanium dissolved during the time of Δt are SP × ΔL × DTi, where DTi is the mole density of Ti cations in TiO2. If all the oxygen-containing anions migrate across the oxide layer to contribute to the formation of TiO2, we have
No = (SC − SP) × ΔL × Do = n × SP × ΔL × DTi | (4) |
![]() | (5) |
Since the value of n describes moles of water dissociated when one mole of TiO2 dissolved, which should be constant at a certain anodization condition, n should be constant in all cells where the field strength across the barrier layer has a constant value. Therefore, the total porosity of the whole pore array is
![]() | (6) |
The P–n plot for ATO is shown in Fig. 6(c), which is similar to that for AAO. Directly measured from the TEM images of the ATO specimen prepared at 30 V in the present work, the ratio of the pore diameter to the cell diameter is about 0.348. Assuming the film has a perfect hexagonal pore array, the porosity could be written as
Thus the porosity of the TiO2 nanotubular array anodized under the given conditions is about 11.0% (Table 1), corresponding to n = 16.2. It is necessary to point out that the porosity of ATO mentioned here could only be measured near the pore base as the severe chemical etching by the electrolyte could widen the pores significantly especially at the pore mouth.
The anionic current across the oxide layer can be divided into two parts, joxide from the electric field enhanced dissolution of titanium oxide at the oxide/electrolyte interface and jwater from the dissociation of water, i.e. j = joxide + jwater, where jwater/joxide = n/2 derived from eqn (1), since the current density is proportional to the moles of anions created from the surface reactions. The porosity of the ATO film then have a relation with these current densities,
![]() | (7) |
According to Tafel's Law, j = j0exp(βU/d) = j0exp(βE), where j0 and β can be estimated from experiments. For example, when anodization was carried out in ethylene glycol containing 0.3 wt% NH4F and 2 wt% H2O, an empirical estimation of j0 and β could be derived by fitting the experimental data for the current density (j) and effective field strength (E) in Table 1. Then we have j0 = 4.50 × 10−4 mA and β = 10.09 nm V−1, therefore,
j = 4.50 × 10−4 exp(10.09E) | (8) |
Analogy to the AAO case, the electric current contributed by dissolution of the barrier oxide at the pore base of ATO should have an exponential relation with the electric field strength. Therefore we can write joxide = A exp(kE), where A is the pre-exponential factor for dissolution reactions and the coefficient k depends on the working temperature and material property. Neglecting the current induced local heating of the barrier layer at the pore base, for fixed anodization conditions, A and k can be treated as constants. To fit the experimental data for the current density from dissolution of the barrier layer (joxide) and effective field strength (E) in Table 1, the empirical relationship could be derived by
joxide = 2.50 × 10−4 exp(7.66E) | (9) |
The porosity can be written as
![]() | (10) |
From eqn (8) and (10), the relationship between the porosity and the ionic current density (j) can also be deduced as follows
![]() | (11) |
The corresponding P–E and P–j plots, together with experimental data, are shown in Fig. 7, demonstrating a good matching between the experimental data and the calculated curves.
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Fig. 7 Porosity of ATO produced in ethylene glycol containing 0.3 wt% NH4F and 2 wt% H2O as a function of the electric field strength (a) and current density (b) across the oxide layer at the pore base. The inset of (b) shows P–j plots in a larger range of current density. The solid curves are plotted viaeqn (9) and (10), while the circles represent the experimental data. |
As the applied voltage is directly known from the experiments, the relationship between the porosity and the applied voltage is practically more useful than that between the porosity and the field strength. In Tafel's Law, j = j0exp(βU/d), where U/d = E and j is a function of both U and d. We assume the current density increases exponentially with the applied voltage in a steady state in the working range for anodization as implied by the observed data, then
j = j0′exp(αU) | (12) |
Used the current density and applied voltage listed in Table 1, j0′ = 0.057 mA and α = 0.063 V−1.
A combination of eqn (8) and (12) enables us to derive a relationship between the thickness of the oxide layer and the applied voltage:
![]() | (13) |
![]() | (14) |
In another consideration, we know that the thickness of the barrier layer will be finite even at a very low voltage. We can model a relation between the thickness of the barrier layer and the voltage according to the following equation,
d = dmax(1 − exp(−γU)) + d0 | (15) |
![]() | (16) |
Figs. 8(a) and (b) show the plots of porosity of ATOversus applied voltage when we regard either the current density or the barrier thickness as having an exponential relation with the applied voltage, respectively. A good agreement with the experimental results was observed in range of the working conditions for the anodization of titanium.
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Fig. 8 Porosity of ATOversus applied voltage in ethylene glycol containing 0.3 wt% NH4F and 2 wt% H2O as a function of applied voltage, assuming that (a) the current density or (b) the barrier thickness has an exponential relation with the applied voltage. The circles represent experimental data from the present work. |
Eqn (13) predicts a zero thickness of oxide layer if no voltage is applied, which is not quite true as a thin native oxide layer could still form. The P–U relation described in eqn (14) would encounter certain errors while fitting the experiments, which could be much more significant in the low voltage range. Taking this into account, we are much more confident with the exponential relationship of the barrier thickness with the applied voltage.
Since both the barrier layer at pore bottom and the wall thickness are governed by the applied voltage, the established relationship of P–U implies that the pore size in ATO is also governed by the applied voltage. Although a single nanotube has an intention of increasing its pore size according to the equifield strength model (as we mentioned above and experimental observation confirmed this mechanism, e.g. the diameter of the single nanotube in Fig. 5b continuously increases from top to bottom), this self-adjustment can only be allowed in a small range since both the overall porosity and pore size are determined by the field strength. This is why a uniform pore size can be achieved in a whole ATO film (Fig. 9). When a single nanotube increases its pore size, beyond the limit determined by the porosity requirement, the nanotube may split into two or more nanotubes as shown in the inset of Fig. 9. This phenomenon was also often observed from AAO films.
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Fig. 9 SEM image of a top view of an ATO film showing uniform pore size in a large area. The inset shows when the pore size of a single nanotube increases beyond the value restricted by the applied voltage; where there are no neighbouring nanotubes to stop its growth, it may split to two or more nanotubes. |
![]() | (17) |
![]() | (18) |
When anodization takes place at 30 V, the porosity is about 11.0% and the corresponding n is about 16.2. Consequently, only 12.4% of the total titanium cations lost during the anodization are from the dissolution of TiO2 in the oxide/electrolyte interface, while 87.6% of the titanium cations leave the hydroxide/metal interface, migrate across the barrier layer and are ejected into the electrolyte without forming oxide.
Based on the HRTEM studies, it was found the hydroxide layer can be partially crystallized into a polycrystalline state during dehydration enhanced by the electric field without any heat treatment.15 A large number of d-spacings measured from lattice fringes on HRTEM images indicated that these nanocrystallites are β-TiO2, monoclinic with a = 1.216, b = 0.374, c = 0.651 and β = 107.29°. In the present work, it was found that the whole hydroxide layer including the small bridges connecting the nanotubes can be crystallized after annealing at 285 °C for 24 h into a single crystal shell on the nanotubes, when some nanocrystallites were developed in the inner oxide layer. Annealing in air at 600 °C for 5 h, the sizes of monocrystalline domains increased remarkably. It is interesting to see that the crystal phase after high temperature treatment is pure anatase, as all the XRD peaks can be indexed onto this tetragonal phase with the unit cell parameters of a = 0.378 and c = 0.951 nm. Importantly, the original morphology of nanotubular array is almost intact (Fig. 10).
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Fig. 10 (a) SEM image of an ATO nanotubular array after annealing at 600 °C. (b) Corresponding XRD pattern indexed onto the tetragonal anatase structure. |
Fig. 11(a) is a HRTEM image of a sample after annealing at 300 °C for 2 h, showing a small bridge connecting two nanotubes with its structure approaching a single crystal, but many oriented-domains can still be identified. This is an intermediate state of recrystallization process from polycrystalline to monocrystalline phases. Fig. 11(b) is a typical HRTEM image of recrystallized shells of nanotubes after annealing at 285 °C for 24 h. The image contrast pattern and the corresponding diffraction pattern, projected along the [13-1] zone axis of anatase, show that the whole area including bridges overlapped along the view direction as indicated by an arrow is monocrystalline. The HRTEM images from the same sample also suggested that polycrystallites were developed in the original oxide layer, leading to a smart material with polycrystalline titanium oxide nanotubes coated by a single crystal layer on the outer surface and connected by some small bridges with the same anatase phase. It is expected that further annealing may allow recrystallization expanding from the outer surface to the inner surface via an Ostwald ripening process and eventually form a connected single crystal nanotubular array. This crystallization process is similar to the recently established NARS route of crystal growth,27i.e. crystal growth can follow a reversed route: nanoparticles, aggregation, surface recrystallization and single crystals.
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Fig. 11 HRTEM images of small bridges connecting nanotubes after recrystallization by annealing, showing (a) an intermediate state with oriented domains at 300 °C 2 h, and (b) single crystal shell viewed down the [13-1] zone axis of anatase structure at 285 °C 24 h. The arrow points two bridges overlapped along the view direction. The inset is the corresponding FFT diffraction pattern. |
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