Issue 12, 2001
From the journal:

Journal of Materials Chemistry

Tadashi Takahashi,ad   Naoyuki Takahashi,*a   Nariaki Tamura,a   Takato Nakamura,a   Masayuki Yoshioka,b   Wataru Inamic  and  Yoshimasa Kawatac  

* Corresponding authors

a Department of Materials Science and Technology, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka, Japan
E-mail: takanao@mat.eng.shizuoka.ac.jp

b Shizuoka Industrial Research Institute of Shizuoka Prefecture, 2078 Makigaya, Shizuoka, Shizuoka, Japan

c Department of Mechanical Engineering, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka, Japan

d Group I, Development, Suzuki Motor Corporation, Hamamatsu-Nishi, Hamamatsu, Shizuoka, Japan

Abstract

Cubic Fe4N epitaxial layers have been grown on a MgO (100) substrate by atmospheric pressure halide vapor-phase epitaxy using FeCl3 and NH3 as the starting materials. The full width at half maximum of the X-ray (200) diffraction peak for the Fe4N epitaxial layer was about 0.05°. Transmission electron diffraction measurements revealed a diffraction pattern similar to that of a single crystal with cubic structure. The saturation magnetization and coercive force of an Fe4N epitaxial layer deposited at 600 °C were 182.0 emu g−1 and 30 Oe, respectively. It was found, for the first time, that the epitaxial layer of Fe4N displayed anomalous light reflectivity modulated by an external magnetic field.

Graphical abstract: Growth of Fe4N epitaxial layers displaying anomalous light reflectivity modulated by an external magnetic field

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Article information

DOI
https://doi.org/10.1039/B103465K
Article type
Paper
Submitted
18 Apr 2001
Accepted
13 Sep 2001
First published
25 Oct 2001

J. Mater. Chem., 2001,11, 3154-3157

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Growth of Fe4N epitaxial layers displaying anomalous light reflectivity modulated by an external magnetic field

T. Takahashi, N. Takahashi, N. Tamura, T. Nakamura, M. Yoshioka, W. Inami and Y. Kawata, J. Mater. Chem., 2001, 11, 3154 DOI: 10.1039/B103465K

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