Issue 12, 2001
From the journal:

Journal of Materials Chemistry

Kouji Omichi,*a   Naoyuki Takahashi,a   Takato Nakamura,a   Masayuki Yoshioka,b   Shinji Okamotoc  and  Hajime Yamamotod  

* Corresponding authors

a Department of Material Science and Technology, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka, Japan
E-mail: takanao@mat.eng.shizuoka.ac.jp
Fax: +81-53-478-1197
Tel: +81-53-478-1197

b Shizuoka Industrial Research Institute of Shizuoka Prefecture, 2078 Makigaya, Shizuoka, Japan

c Graduate School of Material Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara, Japan

d Department of Engineering, Tokyo University of Technology, 1404, Katakura, Hachioji, Tokyo, Japan

Abstract

Thin films of ZnO were grown on a sapphire(0001) substrate by atmospheric pressure halide vapor phase epitaxy. A double-crystal X-ray diffraction study showed a minimum full width at half maximum of the hexagonal ZnO(0002) line after 1212 s for the film deposited at 1023 K. The room-temperature photoluminescence spectrum displays an ultraviolet emission at 381.0 nm due to the recombination of free excitons.

Graphical abstract: AP-HVPE growth of ZnO with room-temperature ultraviolet emission

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Article information

DOI
https://doi.org/10.1039/B103467G
Article type
Paper
Submitted
18 Apr 2001
Accepted
10 Sep 2001
First published
26 Oct 2001

J. Mater. Chem., 2001,11, 3158-3160

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AP-HVPE growth of ZnO with room-temperature ultraviolet emission

K. Omichi, N. Takahashi, T. Nakamura, M. Yoshioka, S. Okamoto and H. Yamamoto, J. Mater. Chem., 2001, 11, 3158 DOI: 10.1039/B103467G

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