Issue 14, 1995

Photoluminescence studies of chemical adsorption of GaAs/AlxGa1 –xAs multiquantum well semiconductor

Abstract

Adsorption of ferrocene and p-methylnitrobenzene on a GaAs/AlxGa1 –xAs multiquantum well semiconductor is characterized by the changes in the photoluminescent response in terms of the interactions of adsorbed molecules with surface states.

Article information

Article type
Paper

J. Chem. Soc., Chem. Commun., 1995, 1439-1440

Photoluminescence studies of chemical adsorption of GaAs/AlxGa1 –xAs multiquantum well semiconductor

Y. Liu, X. Xiao, X. Li, Z. Xu, Z. Yuan, Y. Zeng, C. Yang and D. Sun, J. Chem. Soc., Chem. Commun., 1995, 1439 DOI: 10.1039/C39950001439

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