Contact printing of horizontally aligned Zn2GeO4 and In2Ge2O7nanowire arrays for multi-channel field-effect transistors and their photoresponse performances

Abstract

The ternary oxides, Zn₂GeO₄ and In₂Ge₂O₇ nanowires, are promising n-type semiconductors with outstanding transport properties for high performance electronic devices. By using the direct contact printing process, we reported the assembly of horizontally aligned Zn₂GeO₄ and In₂Ge₂O₇ nanowire arrays to be used as building blocks for high performance multi-channel field-effect transistors. The as-fabricated multi-channel transistors exhibited higher voltage stability and repeatability than their single nanowire based counterparts. The effective mobilities of the multi-channel field-effect transistors were calculated to be 25.44 cm² V⁻¹ s⁻¹ and 11.9 cm² V⁻¹ s⁻¹, comparable to the single-channel FETs. The as-fabricated multi-channel transistors were also used as high performance photodetectors, exhibited a high sensitivity to ultraviolet light illumination with a photoconductive gain and quantum efficiency as high as 1.034 × 10⁵ and 1.032 × 10⁷% for Zn₂GeO₄ nanowires and 2.58 × 10⁵ and 2.617 × 10⁷% for In₂Ge₂O₇ nanowires.