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Issue 25, 2018, Issue in Progress
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Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping

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Abstract

A strategy for self-rectifying memory diodes based on a polymer–carbon dot hybrid structure, with a configuration of rGO/PEDOT : PSS/carbon dots/MEH-PPV/Al, has been proposed. The fabricated device exhibits a rectification of 103 in the rectification model and an ON/OFF current ratio of 121 in the memory model. The rectifying behavior was attributed to an energy level offset between the electrodes and the bilayer polymers and the memory effect was induced by carrier trapping of carbon dots within the polymers.

Graphical abstract: Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping

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Article information


Submitted
05 Mar 2018
Accepted
31 Mar 2018
First published
16 Apr 2018

This article is Open Access

RSC Adv., 2018,8, 13917-13920
Article type
Paper

Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping

H. Lu, Y. Chen, Q. Chang, S. Cheng, Y. Ding, J. Chen, F. Xiu, X. Wang, C. Ban, Z. Liu, J. Liu and W. Huang, RSC Adv., 2018, 8, 13917
DOI: 10.1039/C8RA01928B

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