Issue 80, 2016, Issue in Progress

Impact of postdeposition annealing on the sensing and impedance characteristics of TbYxOy electrolyte–insulator–semiconductor pH sensors

Abstract

In this investigation, we explored the impact of postdeposition annealing (PDA) on the sensing and impedance characteristics of TbYxOy sensing films deposited on Si(100) substrates through reactive cosputtering for electrolyte–insulator–semiconductor (EIS) pH sensors. The TbYxOy EIS sensor annealed at 800 °C exhibited the best sensing characteristics (pH sensitivity, hysteresis voltage, and drift rate). In addition, the effect of PDA treatment on the impedance properties of TbYxOy EIS sensors was studied using the capacitance–voltage method. The resistance and capacitance of TbYxOy sensing films were determined using different frequency ranges in accumulation, depletion, and inversion regions. In our impedance spectroscopy analysis, the semicircle diameter of the TbYxOy EIS sensor became smaller, due to a gradual decrease in the bulk resistance of the device, as the PDA temperature was increased.

Graphical abstract: Impact of postdeposition annealing on the sensing and impedance characteristics of TbYxOy electrolyte–insulator–semiconductor pH sensors

Supplementary files

Article information

Article type
Paper
Submitted
02 May 2016
Accepted
01 Aug 2016
First published
02 Aug 2016

RSC Adv., 2016,6, 76673-76678

Author version available

Impact of postdeposition annealing on the sensing and impedance characteristics of TbYxOy electrolyte–insulator–semiconductor pH sensors

T. Pan, C. Chen, T. Wu and S. Pang, RSC Adv., 2016, 6, 76673 DOI: 10.1039/C6RA11377J

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements