Jump to main content
Jump to site search

Issue 75, 2014
Previous Article Next Article

Nitridation effect of the α-Al2O3 substrates on the quality of the GaN films grown by pulsed laser deposition

Author affiliations

Abstract

GaN films have been grown on the nitrided and non-nitrided α-Al2O3 substrates by pulsed laser deposition (PLD). The surface morphologies and structural properties of these as-grown GaN films have been investigated carefully. This reveals that, when the nitridation process is performed on the α-Al2O3 substrates, the surface morphologies and structural properties of the as-grown GaN films grown on the as-nitrided α-Al2O3 substrates are improved dramatically. The effect of nitridation on the properties of GaN films and the growth mechanism of GaN films on nitrided α-Al2O3 substrates by PLD have been carefully studied. An effective approach to achieve high-quality GaN films on α-Al2O3 substrates by PLD is hence presented.

Graphical abstract: Nitridation effect of the α-Al2O3 substrates on the quality of the GaN films grown by pulsed laser deposition

Back to tab navigation

Publication details

The article was received on 21 Jun 2014, accepted on 02 Aug 2014 and first published on 04 Aug 2014


Article type: Paper
DOI: 10.1039/C4RA06070A
Author version
available:
Download author version (PDF)
RSC Adv., 2014,4, 39651-39656

  •   Request permissions

    Nitridation effect of the α-Al2O3 substrates on the quality of the GaN films grown by pulsed laser deposition

    W. Wang, Z. Liu, W. Yang, Y. Lin, S. Zhou, H. Qian, H. Wang, Z. Lin and G. Li, RSC Adv., 2014, 4, 39651
    DOI: 10.1039/C4RA06070A

Search articles by author

Spotlight

Advertisements