Issue 36, 2014
From the journal:

RSC Advances

The synergistic influence of anionic bath immersion time on the photoelectrochemical performance of CZTS thin films prepared by a modified SILAR sequence†

M. P. Suryawanshi,ab   P. S. Patil,b   S. W. Shin,c   K. V. Gurav,a   G. L. Agawane,a   M. G. Gang,a   Jin Hyeok Kim*a  and  A. V. Moholkar*b  

* Corresponding authors

a Photonics Technology Research Institute, Department of Materials Science and Engineering, Chonnam National University, 300, Yongbong-Dong, Buk-Gu, Gwangju 500-757, South Korea
E-mail: jinhyeok@chonnam.ac.kr

b Thin Film Nanomaterials Laboratory, Department of Physics, Shivaji University, Kolhapur 416-004, M. S., India
E-mail: avmoholkar@gmail.com

c Department of Materials Science and Engineering, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701, South Korea

Abstract

A novel approach of successive ionic adsorption and reaction (SILAR) with a modified sequence is developed to synthesize Cu2ZnSnS4 (CZTS) films with outstanding photovoltaic characteristics. The influence of different anionic bath immersion times on the properties of CZTS films is investigated. The best PEC of 2.33% with a maximum Jsc of 12.88 mA cm−2, Voc of 0.42 V and FF of 0.43 is obtained for the lower value of anionic bath immersion time.

Graphical abstract: The synergistic influence of anionic bath immersion time on the photoelectrochemical performance of CZTS thin films prepared by a modified SILAR sequence

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Article information

DOI
https://doi.org/10.1039/C4RA01208A
Article type
Communication
Submitted
11 Feb 2014
Accepted
25 Mar 2014
First published
26 Mar 2014

RSC Adv., 2014,4, 18537-18540

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The synergistic influence of anionic bath immersion time on the photoelectrochemical performance of CZTS thin films prepared by a modified SILAR sequence

M. P. Suryawanshi, P. S. Patil, S. W. Shin, K. V. Gurav, G. L. Agawane, M. G. Gang, J. H. Kim and A. V. Moholkar, RSC Adv., 2014, 4, 18537 DOI: 10.1039/C4RA01208A

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