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Issue 39, 2011
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Mixed mode, ionic-electronic diode using atomic layer deposition of V2O5 and ZnO films

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Abstract

We demonstrate high current rectification in a new system comprising 30 nm of hydrated vanadium pentoxide and 100 nm of zinc oxide (V2O5·nH2O–ZnO) thin film structures. The devices are prepared using a low temperature (<150 °C), all atomic layer deposition process. A key element in the rectifying properties comes from anomalous p-type conductivity in V2O5 – an otherwise well known n-type semiconductor. Experimental evidence points to protonic (H+) conductivity due to intercalated water in V2O5 as the source for p-type behaviour, while the ZnO is known to be electronically n-type. Thus, the diode behaves as a novel, mixed mode ionic-electronic rectifier. Further, we show that the diode characteristics are strongly dependent on the electrode material in contact with V2O5·nH2O. A high Ion/Ioff ratio (598) at ± 2 V is obtained for oxygen-free Pt electrodes, whereas a low Ion/Ioff ratio (19) is obtained for oxygen-rich ITO electrodes, suggesting the deleterious effects of oxygen atom reactivity to device characteristics.

Graphical abstract: Mixed mode, ionic-electronic diode using atomic layer deposition of V2O5 and ZnO films

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Supplementary files

Article information


Submitted
07 Jun 2011
Accepted
01 Aug 2011
First published
01 Sep 2011

J. Mater. Chem., 2011,21, 15391-15397
Article type
Paper

Mixed mode, ionic-electronic diode using atomic layer deposition of V2O5 and ZnO films

P. Banerjee, X. Chen, K. Gregorczyk, L. Henn-Lecordier and G. W. Rubloff, J. Mater. Chem., 2011, 21, 15391
DOI: 10.1039/C1JM12595H

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