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Issue 40, 2020
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Saturation profile based conformality analysis for atomic layer deposition: aluminum oxide in lateral high-aspect-ratio channels

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Abstract

Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made of silicon and consist of rectangular channels supported by pillars. Extreme aspect ratios even beyond 10 000 : 1 enable investigations where the adsorption front does not penetrate to the end of the channel, thus exposing the saturation profile for detailed analysis. We use the archetypical trimethylaluminum (TMA)–water ALD process to grow alumina as a test vehicle to demonstrate the applicability, repeatability and reproducibility of the saturation profile measurement and to provide a benchmark for future saturation profile studies. Through varying the TMA reaction and purge times, we obtained new information on the surface chemistry characteristics and the chemisorption kinetics of this widely studied ALD process. New saturation profile related classifications and terminology are proposed.

Graphical abstract: Saturation profile based conformality analysis for atomic layer deposition: aluminum oxide in lateral high-aspect-ratio channels

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Article information


Submitted
23 Jun 2020
Accepted
29 Sep 2020
First published
30 Sep 2020

This article is Open Access

Phys. Chem. Chem. Phys., 2020,22, 23107-23120
Article type
Paper

Saturation profile based conformality analysis for atomic layer deposition: aluminum oxide in lateral high-aspect-ratio channels

J. Yim, O. M. E. Ylivaara, M. Ylilammi, V. Korpelainen, E. Haimi, E. Verkama, M. Utriainen and R. L. Puurunen, Phys. Chem. Chem. Phys., 2020, 22, 23107
DOI: 10.1039/D0CP03358H

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