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Issue 21, 2018
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Bandgap scaling and negative differential resistance behavior of zigzag phosphorene antidot nanoribbons (ZPANRs)

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Abstract

This work examines the prospect of phosphorene antidot nanoribbons (PANRs) using the density functional based tight binding (DFTB) method. Horizontally perforated PANRs with both armchair (A) and zigzag (Z) configurations were considered for electrical simulations. Our simulation results found that the APANRs cannot be scaled down with nanoribbon width, whereas ZPANRs can be scaled easily. Bandgap scaling in terms of ribbon width, length and antidot number was thoroughly analyzed for ZPANRs. In the end, a two-terminal device was constructed and transmission analysis was performed using the non-equilibrium Green's function (NEGF) methodology. A negative differential resistance (NDR) region appeared in the current–voltage characteristics of the ZPANRs, which paved a pathway for nano-device application.

Graphical abstract: Bandgap scaling and negative differential resistance behavior of zigzag phosphorene antidot nanoribbons (ZPANRs)

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Publication details

The article was received on 05 Mar 2018, accepted on 01 May 2018 and first published on 01 May 2018


Article type: Paper
DOI: 10.1039/C8CP01435C
Citation: Phys. Chem. Chem. Phys., 2018,20, 14855-14863

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    Bandgap scaling and negative differential resistance behavior of zigzag phosphorene antidot nanoribbons (ZPANRs)

    S. Carmel, A. Pon, N. Meenakshisundaram, R. Ramesh and A. Bhattacharyya, Phys. Chem. Chem. Phys., 2018, 20, 14855
    DOI: 10.1039/C8CP01435C

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