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Issue 20, 2016
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Electron dominated thermoelectric response in MNiSn (M: Ti, Zr, Hf) half-Heusler alloys

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Abstract

We solve the transport equations of the electrons and phonons to understand the thermoelectric behaviour of the technologically important half-Heusler alloys MNiSn (M: Ti, Zr, Hf). Doping is simulated within the rigid band approximation. We clarify the origin of the electron dominated thermoelectric response and determine the carrier concentrations with maximal figures of merit. The phonon mean free path is studied to calculate the grain size below which grain refinement methods can enforce ballistic heat conduction to enhance the figure of merit.

Graphical abstract: Electron dominated thermoelectric response in MNiSn (M: Ti, Zr, Hf) half-Heusler alloys

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Publication details

The article was received on 16 Mar 2016, accepted on 12 Apr 2016 and first published on 09 May 2016


Article type: Paper
DOI: 10.1039/C6CP01786J
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Citation: Phys. Chem. Chem. Phys., 2016,18, 14017-14022

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    Electron dominated thermoelectric response in MNiSn (M: Ti, Zr, Hf) half-Heusler alloys

    A. N. Gandi and U. Schwingenschlögl, Phys. Chem. Chem. Phys., 2016, 18, 14017
    DOI: 10.1039/C6CP01786J

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