Aerosol-assisted chemical vapor deposition of WS2 from the single source precursor WS(S2)(S2CNEt2)2†
WS(S2)(S2CNEt2)2 has been successfully employed in the aerosol-assisted chemical vapor deposition of WS2 at temperatures above 350 °C. This precursor was found to decompose primarily through the loss of H2S, CS2, and SCNEt. The WS2 deposits were characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, and X-ray diffraction. The deposits exhibited plate-like structures growing vertically from the substrate.