Issue 8, 2022

ALD oxygen vacancy-rich amorphous Ga2O3 on three-dimensional urchin-like ZnO arrays for high-performance self-powered solar-blind photodetectors

Abstract

The exploration of efficient self-powered solar-blind photodetectors is essential for applications in future sustainable optoelectronic systems. Herein, we demonstrate a photoelectrochemical (PEC)-type heterojunction-driven solar-blind detector constructed by atomic layer deposition (ALD) of oxygen vacancy-rich amorphous Ga2O3 on three-dimensional urchin-like ZnO nanorod arrays (3D VO-Ga2O3/ZnO). The as-fabricated device achieves excellent solar-blind photodetection performance in terms of a high photoresponsivity of 7.97 mA W−1 at 0 V bias, an ultrahigh light to dark ratio of 6.93 × 104 under 266 nm light illumination as well as fast response and recovery times. The excellent performance originates from abundant oxygen vacancies in a-Ga2O3 as donors, high specific surface area and good interface contact enabled by the 3D ordered nanostructure, and high carrier separation rates benefited from the Ga2O3/ZnO heterojunction. Our research offers a feasible and cost-effective approach towards the realization of a high-performance self-powered photodetection system for various applications.

Graphical abstract: ALD oxygen vacancy-rich amorphous Ga2O3 on three-dimensional urchin-like ZnO arrays for high-performance self-powered solar-blind photodetectors

Supplementary files

Article information

Article type
Paper
Submitted
16 Dec 2021
Accepted
28 Jan 2022
First published
29 Jan 2022

Nanoscale, 2022,14, 3159-3165

ALD oxygen vacancy-rich amorphous Ga2O3 on three-dimensional urchin-like ZnO arrays for high-performance self-powered solar-blind photodetectors

D. Ni, Y. Wang, A. Li, L. Huang, H. Tang, B. Liu and C. Cheng, Nanoscale, 2022, 14, 3159 DOI: 10.1039/D1NR08262K

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