We report the epitaxial growth of bismuth oxyhalide BiOX (X = Cl, Br, and I) thin films using mist chemical vapour deposition at atmospheric pressure. The thin films grown under optimum conditions possessed atomically flat surfaces and high crystallinity, where the lattice constants of BiOX were controlled by epitaxial strain.
Z. Sun, D. Oka and T. Fukumura, Chem. Commun., 2020, 56, 9481 DOI: 10.1039/D0CC03431B
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