Issue 13, 2019

The first atomic layer deposition process for FexN films

Abstract

An efficient process for ALD FexN films was reported in this study for the first time. Bis(N,N′-di-tert-butylacetamidinato)iron(II) (Fe(tBu-amd)2) and anhydrous hydrazine (N2H4) were used as reactants. Ideal self-limiting growth behavior was confirmed through the effect of the reactant dose and deposition cycle number on the growth rate (film thickness). Besides, these pure FexN films were able to grow into trench substrates with an aspect ratio of 2.5 : 1 conformally and uniformly, highlighting the potential of this ALD process for complex 3D or porous structures. The possible mechanism was proposed by investigating the reaction between Fe(tBu-amd)2 and N2H4 in toluene, and performing first-principles calculations. Our ALD process is expected to promote the development of FexN-based nanoengineering for its broad applications.

Graphical abstract: The first atomic layer deposition process for FexN films

Supplementary files

Article information

Article type
Communication
Submitted
24 Dec 2018
Accepted
21 Jan 2019
First published
21 Jan 2019

Chem. Commun., 2019,55, 1943-1946

The first atomic layer deposition process for FexN films

L. Du, W. Huang, Y. Zhang, X. Liu and Y. Ding, Chem. Commun., 2019, 55, 1943 DOI: 10.1039/C8CC10175B

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