A simple synthesis of transparent and highly conducting p-type CuxAl1−xSy nanocomposite thin films as the hole transporting layer for organic solar cells

Abstract

Inorganic p-type films with high mobility are very important for opto-electronic applications. It is very difficult to synthesize p-type films with a wider, tunable band gap energy and suitable band energy levels. In this research, p-type copper aluminum sulfide (Cu_xAl_1−xS_y) films with tunable optical band gap, carrier density, hole mobility and conductivity were first synthesized using a simple, low cost and low temperature chemical bath deposition method. These in situ fabricated Cu_xAl_1−xS_y films were deposited at 60 °C using an aqueous solution of copper(II) chloride dihydrate (CuCl₂·2H₂O), aluminium nitrate nonohydrate [Al(NO₃)₃·9H₂O], thiourea [(NH₂)₂CS], and ammonium hydroxide, with citric acid as the complexing agent. Upon varying the ratio of the precursor, the band gap of the Cu_xAl_1−xS_y films can be tuned from 2.63 eV to 4.01 eV. The highest hole mobility obtained was 1.52 cm² V⁻¹ s⁻¹ and the best conductivity obtained was 546 S cm⁻¹. The Cu_xAl_1−xS_y films were used as a hole transporting layer (HTL) in organic solar cells (OSCs), and a good performance of the OSCs was demonstrated using the Cu_xAl_1−xS_y films as the HTL. These results demonstrate the remarkable potential of Cu_xAl_1−xS_y as hole transport material for opto-electronic devices.