An interfacial defect-controlled ZnO/PbS QDs/ZnS heterostructure based broadband photodetector

Abstract

An in situ successive ionic layer adsorption and deposition method is introduced for fabrication of PbS QDs-on-ZnO heterostructures, which improves carriers transport within PbS QDs by eliminating the introduction of ligands. By suitably controlling the interface related defects characteristics through solvent adjustment, broadband photodetection ranging from 340 nm to 840 nm is achieved. Most significantly, improved device performance is achieved even in the case that no obvious type-II heterostructure is formed between ZnO and PbS, which reminds us of the significant role of QD^, defects control besides their size, shape and ligands adjustments.