Room-temperature spin transport in InAs nanowire lateral spin valve

Abstract

With its strong spin–orbital interaction, indium arsenide (InAs) is a potential candidate material for spintronic devices. Owing to the reduced scale and quasi one-dimensional confinement, InAs nanowires are expected to show novel physics property compared with InAs two-dimensional electron gas. In this work, we report room-temperature local measurement of spin transport in an InAs nanowire synthesized from the bottom-up paradigm by molecular beam epitaxy. Due to the advantage of Co/MgO barrier contact, a large spin signal of up to 35 kΩ is observed, and long spin diffusion length (about 1.9 μm) in the unintentionally doped InAs nanowire is achieved by analysing the spin signal using the transfer matrix method.