Issue 8, 2016

The origin of grain boundary capacitance in highly doped ceria

Abstract

The origin of a grain-boundary capacitance in mixed oxide-ion/electronic conductors has been investigated for the case of Ce0.8Sm0.2O1.9−δ using a.c. impedance spectroscopy under low pO2 from 250 to 400 °C. The observed capacitance is interpreted in terms of CeIII:4f1 electrons first introduced into the grains and not into the grain boundaries.

Graphical abstract: The origin of grain boundary capacitance in highly doped ceria

Supplementary files

Article information

Article type
Communication
Submitted
16 Nov 2015
Accepted
28 Jan 2016
First published
04 Feb 2016

Phys. Chem. Chem. Phys., 2016,18, 5901-5904

The origin of grain boundary capacitance in highly doped ceria

E. C. C. Souza and J. B. Goodenough, Phys. Chem. Chem. Phys., 2016, 18, 5901 DOI: 10.1039/C5CP07032E

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements