The origin of grain boundary capacitance in highly doped ceria†
Abstract
The origin of a grain-boundary capacitance in mixed oxide-ion/electronic conductors has been investigated for the case of Ce0.8Sm0.2O1.9−δ using a.c. impedance spectroscopy under low pO2 from 250 to 400 °C. The observed capacitance is interpreted in terms of CeIII:4f1 electrons first introduced into the grains and not into the grain boundaries.