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Issue 6, 2015
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The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films

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Abstract

This paper presents for the first time the effect of strain on the electrical conductance of p-type nanocrystalline SiC grown on a Si substrate. The gauge factor of the p-type nanocrystalline SiC was found to be 14.5 which is one order of magnitude larger than that in most metals. This result indicates that mechanical strain has a significant influence on the electrical conductance of p-type nanocrystalline SiC, which is promising for mechanical sensing applications in harsh environments.

Graphical abstract: The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films

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Publication details

The article was received on 24 Nov 2014, accepted on 26 Dec 2014 and first published on 08 Jan 2015


Article type: Communication
DOI: 10.1039/C4TC02679A
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Citation: J. Mater. Chem. C, 2015,3, 1172-1176
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    The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films

    H. Phan, D. V. Dao, L. Wang, T. Dinh, N. Nguyen, A. Qamar, P. Tanner, S. Dimitrijev and Y. Zhu, J. Mater. Chem. C, 2015, 3, 1172
    DOI: 10.1039/C4TC02679A

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