Jump to main content
Jump to site search

Issue 6, 2015
Previous Article Next Article

The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films

Author affiliations

Abstract

This paper presents for the first time the effect of strain on the electrical conductance of p-type nanocrystalline SiC grown on a Si substrate. The gauge factor of the p-type nanocrystalline SiC was found to be 14.5 which is one order of magnitude larger than that in most metals. This result indicates that mechanical strain has a significant influence on the electrical conductance of p-type nanocrystalline SiC, which is promising for mechanical sensing applications in harsh environments.

Graphical abstract: The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films

Back to tab navigation

Article information


Submitted
24 Nov 2014
Accepted
26 Dec 2014
First published
08 Jan 2015

J. Mater. Chem. C, 2015,3, 1172-1176
Article type
Communication
Author version available

The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films

H. Phan, D. V. Dao, L. Wang, T. Dinh, N. Nguyen, A. Qamar, P. Tanner, S. Dimitrijev and Y. Zhu, J. Mater. Chem. C, 2015, 3, 1172
DOI: 10.1039/C4TC02679A

Social activity

Search articles by author

Spotlight

Advertisements