Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction

Xianjie Wang; Bingqian Song; Mingxue Huo; Yunfei Song; Zhe Lv; Yu Zhang; Yang Wang; Yongli Song; Jiahong Wen; Yu Sui; Jinke Tang

doi:10.1039/C5RA11872G

Fast and sensitive lateral photovoltaic effects in Fe₃O₄/Si Schottky junction

Xianjie Wang,^a Bingqian Song,^a Mingxue Huo,*^b Yunfei Song,^a Zhe Lv,^a Yu Zhang,^a Yang Wang,^a Yongli Song,^a Jiahong Wen,^a Yu Sui*^a and Jinke Tang*^c

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* Corresponding authors

^a Department of Physics, Harbin Institute of Technology, Harbin 150001, People's Republic of China
E-mail: suiyu@hit.edu.cn

^b Department of Microelectronics Science and Technology, School of Astraunutics, Harbin Institute of Technology, Harbin 150001, People's Republic of China
E-mail: huomingxue@hit.edu.cn

^c Department of Physics & Astronomy, University of Wyoming, Laramie, WY 82071, USA
E-mail: jtang2@uwyo.edu

Abstract

In this paper, we report the fast and sensitive lateral photovoltaic (LPE) effects in a Fe₃O₄/Si junction. Good rectifying I–V characteristics and large LPE are observed in the Fe₃O₄/Si junction. The LPE exhibits a linear dependence on the position of the laser spot, and the position sensitivity can reach 32.5 mV mm⁻¹. The optical response time and relaxation time of LPE were ∼60 ns and 5 μs, respectively. The enhanced LPE properties and the fast relaxation time in the Fe₃O₄/Si junction were caused by the formation of the inversion layer in the interface of Fe₃O₄/Si.

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Fast and sensitive lateral photovoltaic effects in Fe₃O₄/Si Schottky junction

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Fast and sensitive lateral photovoltaic effects in Fe₃O₄/Si Schottky junction

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