Issue 4, 2015

Nonvolatile optically-erased colloidal memristors


A nonconjugated methacrylate terpolymer containing carbazole moieties (electron donors), 1,3,4-oxadiazole moieties (electron acceptors), and Coumarin-6 in the pendant groups was synthesized via free radical copolymerization of methacrylate monomers containing the respective functional groups. The terpolymer was formed into 57 nm particles through a mini-emulsion route. For a thin 100 nm film of the fused particles sandwiched between an indium-tin oxide (ITO) electrode and an Al electrode, the structure behaved as a nonvolatile flash (rewritable) memory with accessible electronic states that could be written, read, and optically erased. The device exhibited a turn-on voltage of ca. −4.5 VDC and a 106 current ratio. A device in the ON high conductance state could be reverted to the OFF state with a short exposure to a 360 nm light source. The development of semiconducting colloidal inks that can be converted into electroactive devices through a continuous processing method is a critical step in the widespread adoption of these 2D manufacturing technologies for printed electronics.

Graphical abstract: Nonvolatile optically-erased colloidal memristors

Article information

Article type
05 Sep 2014
08 Oct 2014
First published
10 Oct 2014

Nanoscale, 2015,7, 1270-1279

Author version available

Nonvolatile optically-erased colloidal memristors

C. F. Huebner, V. Tsyalkovsky, Y. Bandera, M. K. Burdette, J. A. Shetzline, C. Tonkin, S. E. Creager and S. H. Foulger, Nanoscale, 2015, 7, 1270 DOI: 10.1039/C4NR05167J

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