Synthesis and characterisation of novel aluminium and gallium precursors for chemical vapour deposition

Abstract

The β-ketoimine ligand [(Me)CN(H){ⁱPr}–CHC(Me)O] (L₁H) and the bis(β-ketoimine) ligands [(CH₂)₂{N(H)C(Me)–CHC(R)O}₂] (L₂H₂, R = Me; L₃H₂, R = C₆H₅) linked by ethylene bridges have been used to form aluminium and gallium complexes: [Al(L₁)Et₂] (1), [Ga(L₁)₂Cl] (2), [AlL₂(OⁱPr)] (3) and [GaL₃Me] (4). The complexes were characterised by NMR spectroscopy, mass spectroscopy, and single crystal X-ray diffraction, with the exception of 1 which was isolated as an oil. Compounds 1–4 have been used for the first time as single source precursors for the deposition of Al₂O₃ (1, 3) and Ga₂O₃ (2, 4) respectively. Thin films were deposited via aerosol assisted (AA)CVD with toluene as the solvent.