Issue 23, 2014

Strain engineering the properties of graphene and other two-dimensional crystals

Abstract

Graphene has been widely studied for its many extraordinary properties, and other two-dimensional layered materials are now gaining increased interest. These excellent properties make thin layer materials very attractive for integration into a wide variety of technologies, particularly in flexible optoelectronic devices. Therefore, gaining control over these properties will allow for a more focused design and optimisation of these possible technologies. Through the application of mechanical strain it is possible to alter the electronic structures of two-dimensional crystals, such as graphene and transition metal dichalcogenides (e.g. MoS2), and these changes in electronic structure can alter their behaviour. In this perspective we discuss recent advances in the strain engineering of thin layer materials, with a focus on using Raman spectroscopy and electrical transport to investigate the effect of strain as well as the effect of strain on the chemical functionalisation of graphene.

Graphical abstract: Strain engineering the properties of graphene and other two-dimensional crystals

Article information

Article type
Perspective
Submitted
25 Dec 2013
Accepted
21 Apr 2014
First published
25 Apr 2014

Phys. Chem. Chem. Phys., 2014,16, 11124-11138

Author version available

Strain engineering the properties of graphene and other two-dimensional crystals

M. A. Bissett, M. Tsuji and H. Ago, Phys. Chem. Chem. Phys., 2014, 16, 11124 DOI: 10.1039/C3CP55443K

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements