Jump to main content
Jump to site search

Issue 3, 2013
Previous Article Next Article

Bandgap engineering of CdxZn1−xTe nanowires

Author affiliations


Bandgap engineering of single-crystalline alloy CdxZn1−xTe (0 ≤ x ≤ 1) nanowires is achieved successfully through control of growth temperature and a two zone source system in a vapor–liquid–solid process. Extensive characterization using electron microscopy, Raman spectroscopy and photoluminescence shows highly crystalline alloy nanowires with precise tuning of the bandgap. It is well known that bulk CdxZn1−xTe is popular for construction of radiation detectors and availability of a nanowire form of this material would help to improve detection sensitivity and miniaturization. This is a step forward towards the accomplishment of tunable and predetermined bandgap emissions for various applications.

Graphical abstract: Bandgap engineering of CdxZn1−xTe nanowires

Back to tab navigation

Supplementary files

Publication details

The article was received on 22 Oct 2012, accepted on 17 Dec 2012 and first published on 18 Dec 2012

Article type: Communication
DOI: 10.1039/C2NR33284A
Citation: Nanoscale, 2013,5, 932-935
  •   Request permissions

    Bandgap engineering of CdxZn1−xTe nanowires

    K. Davami, J. Pohl, M. Shaygan, N. Kheirabi, H. Faryabi, G. Cuniberti, J. Lee and M. Meyyappan, Nanoscale, 2013, 5, 932
    DOI: 10.1039/C2NR33284A

Search articles by author