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Issue 15, 2012
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Nanopatterning by direct-write atomic layer deposition

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Abstract

A novel direct-write approach is presented, which relies on area-selective atomic layer deposition on seed layer patterns deposited by electron beam induced deposition. The method enables the nanopatterning of high-quality material with a lateral resolution of only ∼10 nm. Direct-write ALD is a viable alternative to lithography-based patterning with a better compatibility with sensitive nanomaterials.

Graphical abstract: Nanopatterning by direct-write atomic layer deposition

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Publication details

The article was received on 19 Mar 2012, accepted on 13 Jun 2012 and first published on 18 Jun 2012


Article type: Communication
DOI: 10.1039/C2NR30664F
Nanoscale, 2012,4, 4477-4480

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    Nanopatterning by direct-write atomic layer deposition

    A. J. M. Mackus, S. A. F. Dielissen, J. J. L. Mulders and W. M. M. Kessels, Nanoscale, 2012, 4, 4477
    DOI: 10.1039/C2NR30664F

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