Issue 36, 2010

Chemisorption-induced gap state at organic–metal interface: Benzenethiol on Pt(111)

Abstract

Electron emission spectra obtained by thermal collisions of He*(23S) metastable atoms with benzenethiol (C6H5SH) on Pt(111) were measured to characterize the chemisorption-induced gap state (CIGS) formed at the organic–metal interface. First-principles calculations using density functional theory were also performed for an ordered thiolate (C6H5S) monolayer on Pt(111). Our data exhibit that the CIGS due to the S 3p–Pt 5d mixings appears just below the Fermi level (EF) of the substrate, where the local density of states decreases drastically from the S terminal to the benzene ring. Furthermore, strong benzene π(1e1g)–S 3p couplings are apparently lifted upon the formation of thiolate. These features indicate that thiolate is not a good mediator of metal wave functions at EF, which is closely related to tunneling probability (and eventually electric conductance) in the relevant metal–organic–metal junctions at zero bias.

Graphical abstract: Chemisorption-induced gap state at organic–metal interface: Benzenethiol on Pt(111)

Article information

Article type
Paper
Submitted
15 Jan 2010
Accepted
01 Jun 2010
First published
26 Jul 2010

Phys. Chem. Chem. Phys., 2010,12, 10914-10918

Chemisorption-induced gap state at organic–metal interface: Benzenethiol on Pt(111)

S. Masuda, T. Kamada, K. Sasaki, M. Aokia and Y. Morikawa, Phys. Chem. Chem. Phys., 2010, 12, 10914 DOI: 10.1039/C001016B

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