Various configurations of In nanostructures on GaAs (100) by droplet epitaxy
Abstract
In sharp contrast to the general belief in the round shape of In droplets, we report various configurations of In
* Corresponding authors
a Department of Electronic Engineering, Kwangwoon University, Nowon-gu, Seoul, South Korea
b Institute of Nanoscale Science and Engineering, University of Arkansas, Fayetteville, AR, USA
In sharp contrast to the general belief in the round shape of In droplets, we report various configurations of In
J. Lee, Z. Wang, Y. Hirono, E. Kim, N. Kim, S. Park, C. Wang and G. J. Salamo, CrystEngComm, 2010, 12, 3404 DOI: 10.1039/C0CE00057D
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