Issue 2, 2008

Growth of iron cobaltoxides by atomic layer deposition

Abstract

Thin films of iron cobalt oxides with spinel-type structure are made by the atomic layer deposition (ALD) technique using Fe(thd)3 (Hthd = 2,2,6,6-tetramethylheptane-3,5-dione), Co(thd)2, and ozone as precursors. Pulse parameters for ALD-type growth are established and such growth can be achieved at deposition temperatures between 185 and 310 °C. Films have been deposited on amorphous soda-lime glass and single-crystalline substrates of Si(100), MgO(100), and α-Al2O3(001) which all provide crystalline films, but with various orientations and crystallite sizes. Application of an external magnetic field during the film growth does not influence film growth characteristics (growth rate, crystallinity, topography etc.). Magnetization data are reported for phase-pure films of spinel-type structure with composition Fe2CoO4.

Graphical abstract: Growth of iron cobalt oxides by atomic layer deposition

Article information

Article type
Paper
Submitted
31 Jul 2007
Accepted
11 Oct 2007
First published
23 Oct 2007

Dalton Trans., 2008, 253-259

Growth of iron cobalt oxides by atomic layer deposition

M. Lie, K. Barnholt Klepper, O. Nilsen, H. Fjellvåg and A. Kjekshus, Dalton Trans., 2008, 253 DOI: 10.1039/B711718N

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