Issue 6, 2005

ArF laser photolysis of gaseous CS2–(CH3)4Sn mixtures: gas-phase reaction between tin and sulfur and deposition of nanosized tin sulfides incorporated in a polymer network

Abstract

ArF laser photolysis of gaseous (CH3)4Sn–CS2 mixtures results in chemical vapour deposition of tin sulfides (SnS and SnS2) incorporated in a network of a blend of polythiene and organotin polymers. The evidence for the tin sulfides was obtained by examination of the deposited coatings by infrared spectroscopy, Raman spectroscopy and electron microscopy. The formation of tin sulfides is explained by reaction of transiently generated Sn and S atoms. The reported results reveal for the first time that nanosized clusters of Sn and S produced in the gas phase react into tin sulfides at ambient temperature of the gas phase.

Graphical abstract: ArF laser photolysis of gaseous CS2–(CH3)4Sn mixtures: gas-phase reaction between tin and sulfur and deposition of nanosized tin sulfides incorporated in a polymer network

Supplementary files

Article information

Article type
Paper
Submitted
13 Dec 2004
Accepted
21 Feb 2005
First published
15 Apr 2005

New J. Chem., 2005,29, 785-788

ArF laser photolysis of gaseous CS2–(CH3)4Sn mixtures: gas-phase reaction between tin and sulfur and deposition of nanosized tin sulfides incorporated in a polymer network

R. Tomovska, V. Vorlíček, J. Boháček, J. Šubrt and J. Pola, New J. Chem., 2005, 29, 785 DOI: 10.1039/B418758J

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