A procedure was developed for preparing bulk carbon nitride crystals from an amorphous nitrogen- and carbon-containing material at ultrahigh pressures and temperatures in the presence of seeds of crystalline C3N4 films prepared by a laserelectric discharge method.
K. P. Burdina, N. B. Zorov, O. V. Kravchenko, Y. Y. Kuzyakov, J. I. Kim and S. A. Kulinich, Mendeleev Commun., 2000, 10, 207 DOI: 10.1070/MC2000v010n06ABEH001299
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