A range of In–Se bond-forming reactions have been
investigated, including insertion of selenium into either an In–C
or In–S bond, reaction of an indium halide with a magnesium
selenolate and via chlorosilane elimination. The reaction of
InBu
t
3
with Se yielded
[Bu
t
2
In(µ-SeBu
t
)]
2
and
[Bu
t
In(µ
3
-Se)]
4
. In contrast,
In(CMe
2
Et)
3
and InBu
n
3
with
Se preferentially formed
[(Me
2
EtC)In(µ
3
-Se)]
4
and
[Bu
n
In(µ
3
-Se)]
4
, respectively. The
reaction of In(CMe
2
Et)
3
with Te yielded
[(Me
2
EtC)In(µ
3
-Te)]
4
]. The compound
[Bu
t
In(µ
3
-Se)]
4
is also formed from
the reaction of
[Bu
t
2
In(µ-SBu
t

)]
2
with either Se or Se
![[double bond, length as m-dash]](https://www.rsc.org/images/entities/char_e001.gif)
PPh
3
, while both it and
[Bu
t
In(µ-SeBu
t

)]
2
may be
prepared from
[Bu
t
2
In(µ-Cl)]
n
and
(Bu
t
Se)MgCl. Similarly,
[Bu
n
2
In(µ-SeBu
t

)]
2
may be prepared from
[Bu
n
2
In(µ-Cl)]
2
. However, the
reaction of [(Me
2
EtC)
2
In(µ-Cl)]
2
with (Bu
t
E)MgCl (E = S, Se or Te) yielded
[(Me
2
EtC)In(µ
3
-E)
4

].
Reaction of [Bu
t
2
M(µ-Cl)]
n
(M = In or Ga) with
Se(SiMe
3

)
2
yielded the silylselenolate
compounds
[Bu
t
2
M(µ-SeSiMe
3

)]
2
. The various In–Se bond-forming reactions are compared.
The molecular structures of
[Bu
t
2
In(µ-EBu
t
)]
2
(E = S or Se) have been determined by X-ray
crystallography.