Alternating-current techniques in semiconductor electrochemistry

Abstract

A new theory of alternating-current effects in semiconductors is presented. The equivalent circuit used by a large number of workers to describe the effects of electroactive surface states is shown to have a firm physical basis at the molecular level, and the connection between the empirically derived circuit elements and such microscopic parameters as rate constants and surface-state densities is given. The implementation of programs designed to obtain such circuit elements from the raw experimental data is described and some examples of the theory are given.