Elham
Khodabakhshi‡
a,
Benjamin
Klöckner‡
b,
Rudolf
Zentel
b,
Jasper J.
Michels
a and
Paul W. M.
Blom
*a
aMax Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany. E-mail: blom@mpip-mainz.mpg.de
bInstitute for Organic Chemistry, Johannes Gutenberg University, Duesbergweg 10–14, 55128 Mainz, Germany
First published on 25th June 2019
A fundamental problem of adding chromophores to an organic host is that their smaller band gap leads to severe trapping of either electrons or holes, resulting in strongly unbalanced transport. We demonstrate that electron trapping by an inorganic quantum dot (QD) in a conjugated polymer host can be suppressed by functionalizing its shell with a thin insulating polystyrene layer. The polystyrene shell not only reduces trapping, but also suppresses detrapping of captured electrons, resulting in increased charging of the QDs with subsequent voltage scans, after initial charging, a red-emitting hybrid polymer:QD light-emitting diode is obtained with voltage independent electroluminescence spectrum and equal efficiency as the blue polymer host.
New conceptsIn displays it is important to have small linewidths to make saturated colors. This is why nowadays quantum dots (QDs) are being used as phosphor, meaning that they convert light generated by a blue/white LED backlight. An even more attractive device would be to incorporate the QDs directly in an electroluminescent device such that no backlight is needed, the QD LED. However, until now this approach only works when a very thin emissive layer containing only a few monolayers of QDs is used, surrounded by a number of organic transport and confinement layers, of which the thickness is very critical. A major problem is that in the QD emissive layer the charge transport needs to be exactly balanced, otherwise the layer gets charged with one type of carrier, which blocks the current. The way out to a robust and simple structure would be to use a thicker layer where the QDs are simply blended with an organic host. All attempts in this direction failed due to the problem that due to their high electron affinity QDs are deep electron traps, leading to strongly unbalanced transport. Here we demonstrate that electron trapping by CdSe/CdxZn1−xS core/shell red QDs in a blue-emitting poly(di-octylfluorene) (PFO) host can be strongly suppressed by functionalizing them with a thin insulating shell of polystyrene. The strong reduction of trapping is confirmed by charge transport measurements and a voltage independent electroluminescence spectrum of hybrid polymer:QD blend LEDs. Our results open a new route towards emissive devices with narrow linewidth, where due to the preservation of charge transport there are no limits to the active layer thickness. |
RL = BLnp | (1) |
RSRH = BSRHntp | (2) |
RSRH = BSRHNtp | (3) |
An interesting alternative for organic dyes are inorganic quantum dots (QDs). High quality colloidal core/shell semiconductor quantum dots (QDs) offer stable, tunable narrow and intense photoemission as function of size in the visible range.10–15 These properties can be exploited in solution-processed hybrid QD/organic polymer light-emitting diodes, which combine the emitting properties of QDs with the flexibility in device construction of the polymeric materials.16–19 However, the conduction and valence band of inorganic semiconductors as CdSe and ZnS are deeper in energy as compared to the corresponding molecular orbitals of most organic hosts, as schematically indicated in Fig. 1b, resulting in strong electron trapping. Furthermore, the holes have to surmount an energy barrier before they can recombine with the trapped electron on the QD. As a result the QD emission can be a combination of Förster energy transfer and trap-assisted recombination.17 In multilayer organic LEDs based on evaporated small molecules, one or a few monolayers of QDs are sandwiched between electron and hole transporting organic layers.11,12 The trapped electrons are then confined in a narrow QD region, enabling the trapped electrons to build up a large electric field that enhances the hole injection into the deep QD valence band. With increasing voltage this charging effect becomes more dominant such that the QD emission grows relative to the host emission (Fig. 1b), which is the opposite spectral dependence as compared to the typical trap-assisted recombination occurring with organic dyes (Fig. 1a). However, at high voltages the high carrier concentration and electric field in the confined QD layers leads to efficiency losses due to Auger recombination and field-induced spatial separation of the electron and hole wave function.20 For solution processed devices such a multilayer approach combined with a few monolayers of QDs is not feasible. Realization of balanced charge transport remains a fundamental problem due to the severe electron trapping of the QDs.21,22 Next to the mismatch in energy levels between organic semiconductors and inorganic QDs for hybrid polymer:QD blends also the blend morphology plays a crucial role.23 For the incorporation of a larger amount of QDs within a polymer matrix the physical blending of the two components is usually insufficient to obtain a homogeneous distribution of QDs and phase separation typically occurs. By hybridizing QDs with conducting polymer brushes a more homogeneous distribution of QDs in the polymer matrix was obtained,24 leading to a better distribution of charges and excitons across the active layer with a reduced efficiency roll-off.23,25
Ideally, a solution would be preferred where the negative contribution of severe electron trapping by the QDs is reduced. Furthermore, a homogeneous distribution of the QDs in the polymer host matrix is required, which can be achieved by coating them with a suitable polymer.24 Charge transport and electron trapping in conjugated polymers has been extensively studied.26 The hopping distance for charge carriers is determined by the wave function overlap of the localized sites and typically amounts to 1.5–2 nm.26 This distance also governs the charge transfer process from a host polymer into a trap. In contrast, fluorescence resonance energy transfer (FRET) is driven by dipole–dipole interaction between an excited donor molecule and an acceptor molecule, with a Förster radius of 5–8 nm.27 Grafting of a thin insulting shell with thickness 3–5 nm on the QD is therefore expected to have a stronger effect on trapping as compared to energy transfer. In the present study we demonstrate that electron trapping by CdSe/CdxZn1−xS core/shell red QDs in a blue-emitting poly(dioctylfluorene) (PFO) host can be suppressed by functionalizing them with a thin insulating shell of polystyrene. The strong reduction of trapping is confirmed by charge transport measurements. Upon charging of the QDs a voltage independent electroluminescence spectrum, dominated by QD emission, is obtained for the hybrid polymer:QD blend LEDs.
Fig. 2 (a) Synthesis of diblock copolymer poly(styrene-block-cysteaminemethyldisulfide) (P(S-b-SSMe)), (b) the ligand exchange procedure and (c) energy-band diagram of PFO:QD system. |
The thickness of the grafted polystyrene shell can be estimated from the dimensions of the polymer chain. The persistence length of polystyrene amounts to lp ∼ 1 nm. Our polystyrene blocks consist of about 20 repeat units. We hence estimate the contour length of the polymer to be Rmax ≈ 5 nm, based on an inter-monomer spacing of ∼2.5 Å. For the determination of the shell thickness the root-mean-square end-to-end distance of the chain is needed, which according to the worm-like chain model31 can be written as a function of lp and Rmax:
(4) |
Plugging in the above given estimates for lp and Rmax gives , which should be sufficient to suppress charge transfer to the QDs.
To investigate the effect of the PS shell on performance of PFO:QDs hybrid LEDs we first compare the electroluminescence spectra of blends of PFO with the unmodified QDs, containing oleic acid ligands (oa-QDs), and with the QD/PS-hybrids, respectively. As is evident from the energy diagram, (Fig. 2c) QDs with a ZnS shell are expected to act as an electron trapping center in PFO. To investigate the mechanism of the QD emission we chose a QD concentration of 3 wt%, in which part of the blue emission from the host can still be observed.
The voltage-dependence of the normalized (to the blue emission) EL spectra of the PLEDs with 3% QD are shown in Fig. 3a and b (unmodified oa-QD) and Fig. 3c–f (QD/PS-hybrid), respectively. As expected, the FWHM linewidth of the red QD emission is significantly smaller as compared to the blue PFO emission (0.1 eV vs. 0.5 eV, Fig. S7, ESI†). For PLEDs based on the PFO:oa-QD blend the contribution of the red QD emission reduces at higher voltages, both in the up-scan (Fig. 3a) and down-scan (Fig. 3b), which is a fingerprint for trap-assisted recombination. For every subsequent voltage scan the magnitude and voltage dependence of the EL spectrum remains identical (not shown). The spectra are not dependent on the bias history of the device, indicating that the QDs charge and discharge with every up- and down scan, respectively. Furthermore, we observe that for the unmodified oa-QD a significant blue emission remains. In contrast, for the QD/PS-hybrid blends in the first up-scan the contribution from the QD is very small and voltage independent, whereas during the down-scan the relative contribution from the red QD emission strongly grows. This behaviour, a voltage independent EL spectrum in the up-scan and larger but voltage dependent QD emission in the down-scan repeats in subsequent scans (Fig. S8, ESI†). Also, with every new scan the overall QD contribution to the EL spectrum is becoming slightly larger. After five scans (Fig. 3e and f) the contribution from the QD emission is comparable to the spectra from the PFO:oa-QD blend (Fig. 3a and b), but now the spectrum is nearly voltage independent. These EL spectra and corresponding voltage independence are maintained in subsequent scans, even when taken after ten days. We note that the lower noise level in the EL spectra of the PFO:oa-QD blends (Fig. 3a and b) is the result of an increased integration time of the detector.
The voltage dependence of the EL spectra of the PFO:oa-QD blend already indicates that the red QD emission is dominated by trap-assisted recombination. Clearly, coverage of the QD with an oleic-acid ligand, which is representative for an insulating shell of only ∼1.5 nm, does not suppress electron trapping. The near absence of energy transfer is further confirmed by photoluminescence measurements, where the contribution of the QD is hardly visible (Fig. S9, ESI†). The very small contribution of red QD emission during the first voltage up-scan of the QD/PS-hybrid blend indicates that now the trap-assisted recombination of the QDs is strongly suppressed due to reduced electron trapping. By varying the molecular weight of the PS from 2600 g mol−1 to 9800 g mol−1, corresponding to a variation in PS shell thickness from 3 nm to 6 nm, we demonstrate that the contribution of red QD emission to the EL spectra strongly decreases with increasing PS layer thickness (Fig. S10, ESI†). This strong dependence is the result of the exponential dependence of charge transfer on distance.
One could argue that the relative large blue contribution to the electroluminescence of the PFO:oa-QD and QD/PS-hybrid blends could also have a morphological origin. Strong phase separation leading to pure PFO regions would also enhance the blue emission. However, as shown in the Scanning Electron Microscopy (SEM) images of Fig. 4a and b for both types of QD with 5 wt% there is no significant macroscopic phase separation observed and the QDs are well dispersed (Fig. S11, ESI†). By further increasing the QD content we found that for the QD/PS-hybrid phase separation starts to occur for loadings of about 7% as shown in Fig. S12 (ESI†).
Fig. 4 (a) SEM image of PLED active layer with PFO:5% oa-QDs. (b) SEM image of PLED active layer with PFO:5% QD/PS-hybrids. |
To verify the reduced electron trapping in the QD/PS-hybrid blends further we have carried out charge transport measurements on pristine PFO and PFO blended with oa-QDs and QD/PS-hybrids, respectively. In Fig. 5a the electron current is shown using Al/blend/Ba/Al electron-only devices. It is observed that the incorporation of 5% of QD/PS-hybrids leads to a reduction of the electron current of only one order of magnitude. In contrast, the incorporation of 5% of unmodified oa-QDs reduces the electron current nearly by 3 orders of magnitude and clearly shows strong trapping behaviour. The trap-limited electron current of pristine PFO can be described using a Gaussian trap distribution26 and a universal trap density of 2 × 1017 cm−3. Estimating the effect of electron trapping by the QDs is difficult since it is not known how many electrons are trapped by a single QD. However, we can make a relative estimation by calculating the amount of traps that would be required to explain the observed J–V characteristics under the assumption that each trap captures one electron. From numerical device modelling we then obtain that a reduction by one order of magnitude of the electron current of pristine PFO corresponds to 4 × 1016 cm−3 additional single level traps with trap depth of 0.8 eV (Fig. 2c). For the oa-QDs 2 × 1017 cm−3 additional traps are required to describe the electron current. From this relative comparison we obtain that the PS shell suppresses the trapping efficiency by approximately a factor of 5.
We furthermore verified that the incorporation of the QD/PS-hybrids does not significantly affect the hole transport (Fig. S13, ESI†).
As mentioned above, the voltage dependence of the EL spectra for PFO:oa-QD blend PLEDs is characteristic for trap-assisted recombination. Due to the severe trapping the trap-assisted recombination mainly takes place close to the cathode where most of the traps are filled, such that eqn (3) applies, giving rise to a linear dependence on carrier density. However, due to the strongly reduced electron trapping in the PFO:QD/PS-hybrid blends the traps are only partially filled, such that eqn (2) applies. Since QDs have a well-defined conduction band level, the QDs can be considered as single level traps. For a single level trap nt is proportional to n, such that eqn (1) and (2) exhibit an identical voltage dependence. This is the reason why during the up-scan the EL spectrum is voltage independent. However, next to the reduced trapping the PS shell also inhibits escape from electrons that are trapped in a QD. As a result, during the back scan the electrons that were being trapped at 8 V remain in the QDs, such that the trap-assisted recombination can be approximated by RSRH = BSRH × nt(@8 V) × p, leading again to a linear dependence on carrier density. This not only leads to a voltage dependence in the EL spectrum, but also to a stronger contribution of the QD emission at lower voltages as compared to the up-scan, due to the larger amount of trapped electrons. This process repeats in subsequent scans. Since in the subsequent up-scans the amount of trapped electrons is further increased the red emission of the QDs gets more pronounced after each scan.
We note that due to the ‘permanently’ trapped electrons the system is out of thermal equilibrium. The increased amount of trapped electrons also enhances the injection of holes into the QDs due to the build-up of an electric field in the QDs, This charging effect typically leads to an enhanced contribution of QD emission. After about five scans a steady-state is reached, where the effect of trap-assisted recombination and charging on the EL spectra cancel each other, leading to nearly voltage independent EL spectra for both up and down scan.
Finally, PLEDs with 5% QD/PS-hybrids were fabricated and after initial charging (five J–V scans) compared with pristine PFO PLEDs. As can be seen in Fig. 5b the current and light-output measured by the photocurrent density of a Si photodiode remain almost unchanged. We note that the measured photocurrent density is corrected for the difference in sensitivity for blue (PFO) and red (QD) emission of the Si-photodiode. As a result (Fig. 5c) we were able to obtain enhanced voltage independent red QD emission without losing efficiency, as is typical for standard polymer:QD blends due to imbalanced transport as result of severe electron trapping. We verified that the concept of electron trapping suppression also applies to other blue-emitting polymers as polyspirobifluorene (PSF), copolymerized with N,N,N′,N′-tetraaryldiamino biphenyl (TAD), as shown in Fig. S14 (ESI†) However, we note that in this PSF-TAD polymer the hole transporting TAD units lift the HOMO level up to 5.2 eV, thereby increasing the energy barrier for hole transfer to the QD. As a result, the contribution of the red QD decreases when blended with PSF-TAD as compared to PFO, which has a deeper HOMO of 5.8 eV (Fig. 2c).
Furthermore, initial lifetime experiments show that the decrease of light-output under current stress is reduced for the QD/PS-hybrid blends as compared to pristine PFO PLEDs (Fig. S15, ESI†), which is a subject of further study.
The electron current through the blends was measured using electron-only devices having a glass/Al (30 nm)/polymer-QD/Ba (5 nm)/Al (100 nm) architecture. For hole-only and light emitting (dual carrier) devices, a 60 nm hole-injection layer of poly(3,4 ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) (Heraeus Clevios 4083) was spin-coated on ITO-patterned substrates and annealed at 140 °C. Subsequently, the hybrid solution was deposited by spin coating. As top contacts, for hole-only devices MoO3 (10 nm)/Al (100 nm) and for PLEDs Ba (5 nm)/Al (100 nm) were thermally evaporated. After device preparation, steady-state current–voltage measurements were performed in inert (N2) atmosphere using a Keithley 2400 source meter.
Light output was recorded with a calibrated Si photodiode, and electroluminescence (EL) spectra were recorded with a USB4000 UV-Vis-ES Ocean Optics spectrometer. In order to calibrate the photometric brightness we used a luminance meter Konica Minolta LS-110. The measured intensities in candelas were used to convert the photocurrent of the Si diode to luminance (cd m−2).
Footnotes |
† Electronic supplementary information (ESI) available. See DOI: 10.1039/c9mh00551j |
‡ These authors contributed equally to this work. |
This journal is © The Royal Society of Chemistry 2019 |