Yuyu
Pan
*ab,
Yao
Guo
a,
Mei
Zhao
a,
Chang
Li
a and
Bing
Yang
*c
aSchool of Petrochemical Engineering, Shenyang University of Technology, 30 Guanghua Street, Liaoyang, 111003, P. R. China. E-mail: pyy39518768@163.com
bState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
cState Key Laboratory of Supramolecular Structure and Materials, Jilin University, Changchun, 130012, P. R. China. E-mail: yangbing@jlu.edu.cn
First published on 15th January 2021
The “Hot exciton” channel material can take into account both maximizing exciton utilization efficiency (EUE) and maximizing photoluminescent quantum yield (PLQY). It is a new material with broad application prospects. In this article, starting from the classical D–A molecular model system, the long-range correction functional ωb97x, which can accurately describe the CT state, was selected for the excited state calculation. We extended the D–A system to the X-B-D system. In order to preserve the large ΔET1–T2, we selected the NZ group as the central core B; we chose a donor group 10H-phenoxazine (X1) and an acceptor group 1,3,4,6,7,9,9b-heptaazap-henalene (X2) as part X, and 10 donors with different HOMO as part D. By simulating the ground state and excited state properties of these 20 molecules, we found that compared with the traditional D–A molecule, the excited state of the X-B-D molecules underwent more CT or HLCT transition; the number of channels for the reverse intersystem crossing increased from one to multiple, which may provide a new idea for the design of new multi-channel “Hot exciton” materials.
In fact, there are three basic principles for the ideal “Hot exciton” molecular structure and excited state distribution: (i) the molecule has at least two parts that can be tuned, namely, the donor–acceptor (D–A) structure; the interaction between D and A should not be too strong (to avoid the charge-transfer (CT) state becoming the lowest excited state), nor should it be too weak (the CT state cannot be formed effectively). (ii) The lowest excited states S1 and T1 can be guaranteed to possess the localized excited state (LE) characteristics, and their large wave function overlaps between electron and hole are used to ensure a high probability of radiative transition of the S1 state, thereby improving the PLQY of the compound; on the other hand, Sn(n>1) and Tm(m>1) have significant CT state characteristics, so that they can achieve a sufficiently small ΔESn–Tm by overlapping the small electron and hole wave functions, and complete the RISC (Tm → S1 or Tm → Sn(n, m≥2)) process. (iii) There is a sufficiently large energy gap between the high-level triplet excited-states (ΔETm–Tm−1) responsible for reducing the rate of the internal conversion (IC) process (Tm → Tm−1) effectively, which makes the rate of the RISC sufficient to compete with it, and eventually causes the relaxation path of the T exciton change from the T1 state.11–13 This can also effectively prevent the generation and accumulation of the T exciton and overcome the T–T annihilation in the organic phosphorescent materials and the thermally activated delay fluorescence (TADF) materials that causes a serious roll-off in the device under high current density. At present, most of the “Hot exciton” materials are concentrated in the hybridized local and charge transfer (HLCT) materials.7,11,14,15 The most notable feature of HLCT is the combined and compatible transition of the LE and CT states. The LE component in the hybrid state can guarantee a high radiative transition rate, and the weak binding energy of the CT state component can lead to a small ΔEST, which provides the possibility for RISC of the T exciton.
Nevertheless, there are two main challenges for the “Hot exciton” materials. The first is that the high-lying CT states cannot be constructed effectively. The other is that few molecules have large ΔETm–Tm−1, and maintaining this gap is not easy. Many studies revealed that the D–A design is the best approach to develop “Hot exciton” emitters. However, there are few CT states in the singlet and triplet excited states (1CT and 3CT state) in these simple D–A molecules, which means that the “Hot exciton” channel could not be guaranteed to be efficient and unobstructed. Here, the key point is to expand the molecular structure on the basis of ensuring the large ΔETm–Tm−1, and add multiple channels for RISC, aiming at the achievement of high PLQY and EUE.
In addition, the calculation of the spin–orbit coupling and transition rate, and the charge transfer ratio with the help of MOMAP, Multiwfn, and BDF software can further explore the properties of some photophysical processes between the excited states.25–27
Fig. 2 The energy levels of the frontier molecular orbitals (FMOs), the contour plots of the HOMO and LUMO of designed molecules, (a) b-NZ-b and X1-B-D1–10; (b) b-NZ-b and X2-B-D1–10. |
In most cases, an electron is promoted from the HOMO to the LUMO to form the first singlet excited-state (S1). The ΔEST value is decided by the overlap integral of the HOMO and LUMO of the emitters, and a small overlap of the HOMO and LUMO favors a small ΔEST value. In other words, the ΔEST value can be reduced by decreasing the HOMO and LUMO overlap, which can be accomplished by spatially separating the HOMO and LUMO through D–A structures or conjugation-breaking molecular structures. The D–A structures were employed to obtain the small ΔEST in the “Hot exciton” emitters. However, the S1 transition of some molecules does not necessarily exhibit a transition from the HOMO to the LUMO, and so other transfer pathways, such as HOMO → LUMO+1, HOMO−1 → LUMO+1, HOMO−2 → LUMO+1, and HOMO−3 → LUMO+1, can also be considered. Therefore, if there are multiple charge transfer states with similar energy in the excited states of molecules, then multiple RISC channels can be constructed to ensure efficient transmission of excitons. At the same time, if the molecules have large ΔETm–Tm−1, then the utilization of the yields of singlet exciton can be greatly improved in theory.
As for the electron transition character of S1 and T1 states, NTOs were evaluated on the molecules, as shown in Fig. 3. Firstly, both the ‘‘hole’’ and ‘‘particle’’ of T1 states were localized on part B, the core of the molecular backbone, independent of different X and D. Obviously, they all exhibit a π–π* type LE state character. In contrast, S1 states undergo significant changes relative to those of the counterparts upon the incorporation of the D group. To be more specific, the left of Fig. 3 shows the NTOs of the X1-B-D1–10 series. With the weakening of the electron-donating ability of part D, the electron transition character of the S1 state shows a tendency to change from the CT (transited from part D to part B) state to the HLCT state, which was formed by the hybridization of the LE state located on B and CT state transition from D to B, and to another HLCT state, which was formed by the hybridization of the LE state located on B and CT state transition from X to B. We also calculated the charge transfer ratio of the excited state. We divided the molecule into five fragments and calculated the charge transfer among them. The charge transfer ratio of the S1 and T1 states are shown by the arrows in Fig. 3. The charge transfer ratio of the S2–S10 and T2–T10 states are shown in Fig. SII (ESI†), and the specific charge transfer ratio between each fragment are shown in Fig. SIII (ESI†). Moreover, we can also see that the charge transfer ratio is consistent with the NTOs. At the same time, the strength of the oscillator (f) shows a tendency to increase first and then decrease. When part X changes into X2, the trend of the transition characteristics was basically the same as that of X1, which is the change from the CT state to the HLCT state and then to the LE state located on the NZ part, but due to X2, it shows the properties of an electron acceptor, and thus the transition does not occur on part X2.
However, the S1 and T1 states in the above transitions do not exhibit the same CT transition, and this must be caused due to large ΔES1–T1, which, in turn, implies slow kRISC between them. Therefore, in this case, if the T exciton returns to the singlet state through the RISC, there must be an exciton channel at a higher energy level. We drew the NTOs of the first ten excited states of this series of molecules in SII, respectively. As shown in the figures, there were many CT states in the S2–S10 and T2–T10. This suggests that there may be many “Hot exciton” channels in the higher-lying excited states in these molecules. To shed light on the key factors that govern the exciton RISC process, the excited state energy diagrams of these molecules were analyzed carefully, including the first ten singlet and triplet excited states (Fig. 4 and 5).
Fig. 4 The excited state energy diagrams of X1-B-D1-10, including the first ten singlet and ten triplet excited states, respectively. |
Fig. 5 The excited state energy diagrams of X2-B-D1–10, including the first ten singlet and ten triplet excited states, respectively. |
In order to facilitate the observation, combined with the excited state NTOs, we listed the ΔE value between excited states with similar CT state transition in Fig. 3. It can be seen from Fig. 4 and 5 that since the central part of the molecule was NZ, this series of molecules maintained a large ΔET1–T2 (0.92–1.51 eV) in the triplet states, which greatly reduced the IC rate of the triplet excitons. In addition, there were at least two CT states with similar transitions in the first 5 excited states, and the ΔEST value was very small (≈0 eV). Such small ΔEST values ensure the clearance of the “Hot exciton” channel, and the simultaneous existence of multiple channels may further improve the efficiency of the RISC in the triplet excitons.
The RISC rate is proportional to the singlet–triplet energy gap (ΔEST) and spin-orbital coupling (SOC) of the matrix element. The hot exciton emitters have almost zero singlet–triplet energy gap in the higher excited state. So, the stronger SOC will enhance the RISC rate constant, according to the Fermi Golden rule. However, the SOC in pure organic molecules is generally relatively small, less than 1 cm−1, which is much smaller than the SOC in phosphorescent molecules with metallic materials (about 100 cm−1). Therefore, we calculated the SOC between the first 5 singlet states and their adjacent triplet states of the designed molecules. The values are listed in Table S2 (ESI†). From the table, we can find that due to the lack of d orbitals in the atoms of these organic molecules, the SOC was relatively small, but there are many SOC, between singlet states and the adjacent triplet states that exceeded 0.5 cm−1, and we have marked them in the table, especially S5 in the X1-NZ-D1–10 series, and S1 and S5 in the X2-NZ-D1–10 series. This shows that these designed molecules have both a small ΔEST and large SOC, which provides conditions for RISC. However, with the decrease in the EH of the donor group and higher excitation energy, the CT state components were smaller, with a greater proportion of LE states, due to which the coupling between the excited states increased significantly. This also provides a guarantee for the reverse intersystem crossing of excitons. Therefore, as shown in Fig. 6, compared with the traditional “Hot exciton” type molecule, the X-NZ-D type molecule not only maintains a larger ΔET1–T2 but also increases the exciton channel from a one-to-one band. This provides a greater possibility for the RISC of excitons.
Fig. 6 A simple scheme of (a) the traditional “Hot exciton” mode and (b) the multi-channel “Hot exciton” mode in the electroluminescence process. Here, F: fluorescence; P: phosphorescence. |
Footnote |
† Electronic supplementary information (ESI) available: Molecular optimal configuration, natural transition orbitals (NTOs), transition energy (ES, ET), transition dipole moment (λ) of the first 10 excited states, and the spin–orbit coupling (SOC) between excited states. See DOI: 10.1039/d0ma00927j |
This journal is © The Royal Society of Chemistry 2021 |