Issue 10, 2023

Phosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductors

Abstract

We describe a new synthetic methodology for the preparation of high quality, emission tuneable InP-based quantum dots (QDs) using a solid, air- and moisture-tolerant primary phosphine as a group-V precursor. This presents a significantly simpler synthetic pathway compared to the state-of-the-art precursors currently employed in phosphide quantum dot synthesis which are volatile, dangerous and air-sensitive, e.g. P(Si(CH3)3)3.

Graphical abstract: Phosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductors

Supplementary files

Article information

Article type
Communication
Submitted
27 apr 2023
Accepted
19 iyl 2023
First published
19 iyl 2023
This article is Open Access
Creative Commons BY license

Nanoscale Horiz., 2023,8, 1411-1416

Phosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductors

Y. Wang, J. Howley, E. N. Faria, C. Huang, S. Carter-Searjeant, S. Fairclough, A. Kirkland, J. J. Davis, F. Naz, M. T. Sajjad, J. M. Goicoechea and M. Green, Nanoscale Horiz., 2023, 8, 1411 DOI: 10.1039/D3NH00162H

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