Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications†
Abstract
We first demonstrate the use of few layer
* Corresponding authors
a
State Key Laboratory of High Performance Ceramics and Superfine Microstructure and CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China
E-mail:
huangfq@mail.sic.ac.cn
Fax: +86 21 52416360
Tel: +86 21 52411620
b State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
We first demonstrate the use of few layer
H. Bi, S. Sun, F. Huang, X. Xie and M. Jiang, J. Mater. Chem., 2012, 22, 411 DOI: 10.1039/C1JM14778A
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