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Issue 2, 2012
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Low band gap conformal polyselenophene thin films by oxidative chemical vapor deposition

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Abstract

Low band gap conjugated polymers are attractive for their applications in many devices including field-effect transistors, light-emitting diodes, electrochromic devices and photovoltaics. Selenophene-based polymers have many advantageous properties over polythiophene. However, poor solubility of solution-synthesized polyselenophene restricts its applications in the form of thin films. Electrochemical deposition of polyselenophene thin films is possible, but this process is limited to conductive substrates only. In this work, for the first time, we report deposition of polyselenophene (pSe) thin films on non-conductive substrates by a vapor based method, known as oxidative chemical vapor deposition (oCVD). oCVD synthesized pSe thin films were characterized by FT-IR, UV-Vis and X-ray photoelectron spectroscopies. Moreover, the oCVD made pSe shows 0.14 eV lower band gap than its calculated values. Vapor phase deposition of pSe by oCVD provides conformal thin films in a single and dry step. The conformal and dry nature of the pSe film deposition by oCVD may be employed for fabrication of devices on paper based substrates.

Graphical abstract: Low band gap conformal polyselenophene thin films by oxidative chemical vapor deposition

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Publication details

The article was received on 04 Aug 2011, accepted on 17 Oct 2011 and first published on 02 Nov 2011


Article type: Paper
DOI: 10.1039/C1JM13755G
Citation: J. Mater. Chem., 2012,22, 405-410
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    Low band gap conformal polyselenophene thin films by oxidative chemical vapor deposition

    D. Bhattacharyya and K. K. Gleason, J. Mater. Chem., 2012, 22, 405
    DOI: 10.1039/C1JM13755G

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