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In-situ synthesis of rGO-Zn0.8Cd0.2S: realization in Schottky diode with low barrier height and highly enhanced photoresponsivity

Abstract

A metal-semiconductor interface is an integral part of many electronic devices as Schottky barrier diode (SBD) is often formed at such interfaces. On the other hand, graphene has seen a stupendous growth in electronic devices since its discovery. In this study, we present the in situ synthesis of reduced graphene oxide-zinc cadmium sulfide (rGO-Zn0.8Cd0.2S) and its performance in Al/rGO-Zn0.8Cd0.2S SBD, compared with Al/Zn0.8Cd0.2S (ZnCdS for short) junction. In this regard, important diode parameters are obtained from Current-voltage (I-V) characteristics under dark and light condition. The Al/rGO-Zn0.8Cd0.2S SBD shows a huge 448% enhanced photoresponsivity led by graphene, compared to its counterpart. Not only that, the detectivity also increased significantly by 2 order. Moreover, we achieve a considerably lower barrier height of 0.16 eV for rGO- Zn0.8Cd0.2S, in contrast to 0.28 eV for Zn0.8Cd0.2S. To further illustrate the improved performance for the rGO-ZnCdS based SBD, space charge limited current (SCLC) theory has been employed which shows vastly improved charge transfer kinetics due to rGO. Notably, there was an exceptional 300% increase in effective mobility for rGO-Zn0.8Cd0.2S. The transport analysis is verified by photoluminescence and electrochemical impedance spectroscopy (EIS) measurements. These results demonstrate the impact of graphene on Zn0.8Cd0.2S and its impressive performance, with a considerably lower barrier height, highly enhanced photoresponse and detectivity. Overall, our extensive study reveals that rGO-Zn0.8Cd0.2S have great potential in future designing of multifunctional optoelectronic devices.

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Publication details

The article was received on 06 Feb 2017, accepted on 15 May 2017 and first published on 16 May 2017


Article type: Paper
DOI: 10.1039/C7NJ00428A
Citation: New J. Chem., 2017, Accepted Manuscript
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    In-situ synthesis of rGO-Zn0.8Cd0.2S: realization in Schottky diode with low barrier height and highly enhanced photoresponsivity

    M. Das, J. Datta, R. Jana, S. Sil, S. Halder and P. P. Ray, New J. Chem., 2017, Accepted Manuscript , DOI: 10.1039/C7NJ00428A

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