Journal of Materials Chemistry C

Materials for optical, magnetic and electronic devices

Paper

Clarifying the preferential occupation of Ga3+ ions in YAG:Ce,Ga nanocrystals with various Ga3+-doping concentrations by nuclear magnetic resonance spectroscopy

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Corresponding authors
a
School of Materials Science and Engineering, Beihang University, Beijing, P. R. China
E-mail: liuxf05@buaa.edu.cn, rhyu@buaa.edu.cn
b
Renewable Energy School, North China Electric Power University, Beijing, P. R. China
c
The College of Materials Science and Engineering, Beijing University of Technology, Beijing, P. R. China
J. Mater. Chem. C, 2016,4, 10691-10700

DOI: 10.1039/C6TC02763F
Received 03 Jul 2016, Accepted 17 Oct 2016
First published online 18 Oct 2016
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Supplementary Info